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Byungchil Kim

Researcher at Georgia Institute of Technology

Publications -  14
Citations -  351

Byungchil Kim is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Semiconductor laser theory & Laser. The author has an hindex of 7, co-authored 14 publications receiving 296 citations. Previous affiliations of Byungchil Kim include Georgia Tech Lorraine.

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Nondestructive evaluation of forced delamination in glass fiber-reinforced composites by terahertz and ultrasonic waves

TL;DR: In this paper, the authors used reflective pulsed terahertz imaging to locate and size the forced delamination in polyetherimide resins in 3D dimensions and determined the thicknesses of the delamination and the layers constituting the laminate.
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Two approaches for ultrafast random bit generation based on the chaotic dynamics of a semiconductor laser

TL;DR: By computing high-order finite differences of the chaotic laser intensity time series, time series with symmetric statistical distributions are obtained that are more conducive to ultrafast random bit generation.
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Experimental bifurcation-cascade diagram of an external-cavity semiconductor laser

TL;DR: This Letter is the first to report experimental bifurcation diagrams of an external-c Cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case and reports for the first time a well resolved experimental Hopf bIfurcation in an ECSL.
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Statistics of the optical intensity of a chaotic external-cavity DFB laser.

TL;DR: The study of the first- and second-order statistics of the optical intensity of a chaotic external-cavity semiconductor DFB laser in fully developed coherence-collapse finds that the experimental probability-density function is significantly more concentrated around the mean optical power and robust to parameter changes than theory predicts.
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Experimental route to chaos of an external-cavity semiconductor laser

TL;DR: In this article, the authors report experimental bifurcation diagrams of a semiconductor laser, biased well above threshold, subjected to external optical feedback, and further provide detailed insight on the standard theoretical framework applied to these lasers.