C.C. Button

Bio: C.C. Button is an academic researcher from University of Sheffield. The author has contributed to research in topics: Quantum well & Laser. The author has an hindex of 19, co-authored 101 publications receiving 1569 citations.

Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1

Abstract: We report the demonstration of a high-contrast (> 100:1), low-voltage multiple quantum well reflection modulator. The performance is achieved by using resonantly-enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Perot cavity, which is at the same time a pin diode. Optimum contrast is observed at ≃860nm with only 9 V bias and ≈3.5dB insertion loss.

Short‐circuit current and energy efficiency enhancement in a low‐dimensional structure photovoltaic device

Abstract: We have studied the forward bias behavior of AlGaAs/GaAs p‐i‐n multiquantum well (MQW) photodiodes. In samples with low background impurity levels in the intrinsic region the high quantum efficiency observed in reverse bias is maintained into forward bias even for carriers photoexcited in the wells. We compare our MQW devices with structures which are identical apart from having AlGaAs intrinsic regions without quantum wells. The short‐circuit currents in the MQW structures are much higher than in the control samples though the open‐circuit voltages are somewhat smaller. In one case the energy conversion efficiency of the MQW device in white light is 110% higher than the control. We discuss the implications of our results for the development of low‐dimensional structure solar cells.

A universal damage induced technique for quantum well intermixing

Abstract: We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer.

Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing

Abstract: The bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material can be accurately tuned by photoabsorption-induced disordering (PAID), using a Nd:YAG laser, to allow lasers, modulators, and passive waveguides to be fabricated from a standard MQW structure. The process relies on optical absorption in the active region of the MQW to produce sufficient heat to cause interdiffusion between the wells and barriers. Bandgap shifts larger than 100 meV are obtainable using laser power densities of around 5 W/spl middot/mm/sup -2/ and periods of illumination of a few minutes to tens of minutes. This process provides an effective way of altering the emission wavelengths of lasers fabricated from a single epitaxial wafer. Blue shifts of up to 160 nm in the lasing spectra of both broad-area and ridge waveguide lasers are reported. The bandgap-tuned lasers are assessed in terms of threshold current density, internal quantum efficiency, and internal losses. The ON/OFF ratios of bandgap-tuned electroabsorption modulators were tested over a range of wavelengths, with modulation depths of 20 dB obtained from material which has been bandgap-shifted by 120 nm, while samples shifted by 80 nm gave modulation depths as high as 27 dB. Single-mode waveguide losses are as low as 5 dB/spl middot/cm/sup -1/ at 1550 mm. Selective-area disordering has been used in the fabrication of extended cavity lasers. The retention of good electrical and optical properties in intermixed material demonstrates that PAID is a promising technique for the integration of devices to produce photonic integrated circuits. A quantum-well intermixing technique using a pulsed laser is also demonstrated.

Voltage enhancement in quantum well solar cells

Abstract: It is known that quantum well solar cells (QWSCs) can enhance short circuit current and power conversion efficiency in comparison with similar, conventional solar cells made from the quantum well (QW) barrier material alone. In this article we report measurements of the dark‐current and open‐circuit voltage (Voc) of a number of quantum well cells in three different lattice‐matched material systems, namely, Al0.35Ga0.65As/GaAs, GaInP/GaAs, and InP/InGaAs. We also present the results obtained from comparable control cells without wells formed either from the material of the barriers or the well material alone. Our results clearly demonstrate in all three cases that, at fixed voltage, QWSC dark currents are systematically lower than would be expected from control cells with the same effective absorption edge. Measurements of Voc in a white‐light source show that the open‐circuit voltages of the QWSCs are higher than those of control cells formed from the well material. Furthermore, this enhancement is more t...

Empirical low-field mobility model for III-V compounds applicable in device simulation codes

Abstract: A Caughey–Thomas-like mobility model with temperature and composition dependent coefficients is used in this work to describe the dependence of electron and hole mobilities on temperature, doping concentration, and alloy composition. Appropriate parameter sets are given for a large number of III–V binary and ternary compounds, including: GaAs, InP, InAs, AlAs, GaP, Al0.3Ga0.7As, In0.52Al0.48As, In0.53Ga0.47As, and In0.49Ga0.51P. Additionally, physically justifiable interpolation schemes are suggested to find the mobilities of various ternary and quaternary compounds (such as AlxGa1−xAs, In1−xGaxP, In1−xGaxAs, In1−xAlxAs, and In1−xGaxAsyP1−y) in the entire range of composition. The models are compared with numerous measured Hall data in the literature and very good agreement is observed. The limitations of the present model are also discussed. The results of this work should be extremely useful in device simulation packages, which are currently lacking a reliable mobility model for the above materials.

The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept

Abstract: The intermediate band (IB) solar cell has been proposed to increase the current of solar cells while at the same time preserving the output voltage in order to produce an efficiency that ideally is above the limit established by Shockley and Queisser in 1961. The concept is described and the present realizations and acquired understanding are explained. Quantum dots are used to make the cells but the efficiencies that have been achieved so far are not yet satisfactory. Possible ways to overcome the issues involved are depicted. Alternatively, and against early predictions, IB alloys have been prepared and cells that undoubtedly display the IB behavior have been fabricated, although their efficiency is still low. Full development of this concept is not trivial but it is expected that once the development of IB solar cells is fully mastered, IB solar cells should be able to operate in tandem in concentrators with very high efficiencies or as thin cells at low cost with efficiencies above the present ones.

Monolithic and multi-gigahertz mode-locked semiconductor lasers: constructions, experiments, models and applications

Abstract: Progress in technology, theory and applications of high-frequency mode-locked diode lasers is reviewed. We present a systematic overview of a wealth of experimental and theoretical results and approaches reported recently in the field of physics, technology and applications of monolithic mode-locked laser diodes.

Quantum well intermixing

Abstract: Intermixing the wells and barriers of quantum well structures generally results in an increase in the band gap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing has been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer; such processes offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICS). Recent progress in QWI techniques is reviewed, concentrating on processes which are compatible with PIC applications, in particular the achievement of low optical propagation losses.