Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

Semiconductor Clusters, Nanocrystals, and Quantum Dots

Twenty years ago in a series of amazing discoveries it was found that a large family of ceramic cuprate materials exhibited superconductivity at temperatures above, and in some cases well above, that of liquid nitrogen. Imaginations were energized by the thought of applications for zero-resistance conductors cooled with an inexpensive and readily available cryogen. Early optimism, however, was soon tempered by the hard realities of these new materials: brittle ceramics are not easily formed into long flexible conductors; high current levels require near-perfect crystallinity; and — the downside of high transition temperature — performance drops rapidly in a magnetic field. Despite these formidable obstacles, thousands of kilometres of high-temperature superconducting wire have now been manufactured for demonstrations of transmission cables, motors and other electrical power components. The question is whether the advantages of superconducting wire, such as efficiency and compactness, can outweigh the disadvantage: cost. The remaining task for materials scientists is to return to the fundamentals and squeeze as much performance as possible from these wonderful and difficult materials.

Materials science challenges for high-temperature superconducting wire

The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in in situ characterization have enabled significant acceleration in improvements to these materials are described. Methods for enhancing the properties of functional materials or creating entirely new functionality at interfaces are covered, including strain engineering and layering control at the atomic-layer level. Emerging applications of these functional oxides such as achieving electrical control of ferromagnetism and the future of these complex functional oxides is discussed.

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Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Oxide ion conducting solid electrolytes based on Bi2O3

Using Rutherford backscattering technique, we have measured the angular distribution of the composition and thickness of the Y‐Ba‐Cu oxide film deposited by firing excimer laser (30 ns, 248 nm) pulses at a stoichiometric Y1Ba2Cu3O7−x pellet. The angular distribution consisted of two distinct components: one a cos θ component, a result of evaporation, and the other a highly forward directed component, a result of a secondary ejection process. The evaporated component is nonstoichiometric, as one would expect, whereas the forward‐directed component has a composition close to that of the pellet. Further, the forward‐directed stoichiometric component increases with the laser energy density in comparison with the evaporated component. These observations are discussed in the context of current models of laser‐induced material ejection at surfaces.The laser energy dependence of the deposition is of critical importance in controlling the film stoichiometry.

Observation of two distinct components during pulsed laser deposition of high Tc superconducting films

As‐deposited superconducting thin films (∼0.1 μm) of YBa2Cu3O7−x have been prepared by pulsed laser deposition on (100) Si with buffer layers of BaTiO3/MgAl2O4. X‐ray diffraction studies reveal that the films grow epitaxially with the c axis preferentially oriented normal to the substrate surface. This is confirmed by ion channeling measurements along the (100) (normal to the surface) and (110) directions of the Si substrate showing a minimum yield of 54% along the (100), and 78% along the (110) axes using 2.8 MeV He++. Preliminary transmission electron microscopy study also supports these results. The as‐deposited films have zero resistance temperatures of 86–87 K, and critical current densities of 6×104 A/cm2 at 77 K and 1.2×105 A/cm2 at 73 K. Our results indicate that the superconducting properties of the films are limited primarily by the quality and degree of epitaxal growth of the buffer layers on the silicon substrate.

High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers

Superconducting thin films of Y1Ba2Cu3Ox with superconducting transition temperature (Tc) near 90 K have been prepared by a laser deposition technique. We show that films prepared on sapphire, lithium niobate, and strontium titanate under identical processing conditions exhibit different electrical characteristics. The film surfaces, interfaces, and crystallinity have been studied by a number of analytical techniques. We conclude that the substrate influences the film properties primarily in three ways: the thermal expansion mismatch introduces cracks in the film, the interface reaction changes the film composition, and the substrate lattice influences the crystallographic orientation of the film.

Substrate effects on the properties of Y‐Ba‐Cu‐O superconducting films prepared by laser deposition

For crystalline advanced materials, such as the high transition temperature oxide superconductors, the growth of defect‐free crystals is often the most sought after desideratum because it opens the doors to fundamental studies and the development of practical applications. We report the observation of YBa2Cu3O7−x(123) thin films having unprecedented structural perfection, at temperatures near 700 °C on [001] LaAlO3. The film’s c axis is in the surface plane, unlike films grown at higher temperatures. This orientation has important advantages for device applications and fundamental studies. The Tc,0 is only 70 K, presumably due to oxygen deficiency caused by thermal stresses; if so, it should be possible to raise the Tc,0 by relieving these stresses.

Structural perfection of Y‐Ba‐Cu‐O thin films controlled by the growth mechanism

We describe chemical modifications of GaAs surfaces which produce robust selenium layers that significantly enhance the electronic properties of the surface. The terminating layers are produced by depositing elemental selenium on GaAs surfaces under alkaline conditions followed by conversion to selenide and selenate using sodium sulfide. These selenium phases are more stable against photo‐oxidation than their sulfide counterparts. On the chemically modified surface, photoluminescence is enhanced 400× and Raman spectroscopy indicates that surface band bending has been reduced to ∼0.1 eV. X‐ray photoelectron spectroscopy reveals significant AsSe bond formation at the surface and a complicated interfacial structure with selenium present in oxidation states varying from 2− to 4+.

Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions

Critical current densities (Jc) in YBa2Cu3O7−x films made at deposition rates from 0.1 to 14.5 nm/s (∼50 μm/h) were measured using a direct transport method. As the deposition rate was increased by two orders of magnitude, the films exhibited no marked degradation in current carrying capability with Jc of ∼4×106 A/cm2 at 77 K and zero field. Jc for all the films showed similar behavior under a magnetic field up to 8 T, although extra structural defects were found in the films deposited at the higher rates. The results from this experiment indicate the feasibility for coating wires, tapes, and other macroscopic shapes with high Tc superconductors using proper vapor deposition techniques.

C. C. Chang

Papers

High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers

Substrate effects on the properties of Y‐Ba‐Cu‐O superconducting films prepared by laser deposition

Structural perfection of Y‐Ba‐Cu‐O thin films controlled by the growth mechanism

Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions

Large critical current densities in YBa2Cu3O7−x thin films made at high deposition rates