scispace - formally typeset
Search or ask a question
Author

C.-C. Lin

Bio: C.-C. Lin is an academic researcher from TSMC. The author has contributed to research in topics: ISFET & Transistor. The author has an hindex of 1, co-authored 1 publications receiving 18 citations.
Topics: ISFET, Transistor, CMOS

Papers
More filters
Proceedings ArticleDOI
01 Dec 2015
TL;DR: A dual-gate ion-sensitive field effect transistor (DGFET) with the back-side sensing structure implemented in a 0.18 μm SOI-CMOS SoC platform realizing high performance bioelectrical detection with non-ideal effect reduction is presented in this paper.
Abstract: A dual-gate ion-sensitive field-effect transistor (DGFET) with the back-side sensing structure implemented in a 0.18 μm SOI-CMOS SoC platform realizing high performance bioelectrical detection with non-ideal effect reduction is presented. Non-ideal effects of the conventional ISFET, such as time drift and hysteresis, are suppressed by the innovative scheme in DGFET using the bottom poly-gate (PG) transistor instead of the fluidic gate (FG) transistor for sensing. As a result, the signal-to-noise ratio (SNR) is improved by 155x, time drift is reduced by 53x, and hysteresis is reduced by 3.7x. For certain applications which require high sensitivity, a pulse-modulated biasing technique can be adopted to effectively reduce time drift with high pH sensitivity of 453 mV/pH which is ∼7.5x enhancement over the Nernst limit in the proposed DGFET.

21 citations


Cited by
More filters
Journal ArticleDOI
Matti Kaisti1
TL;DR: The fundamental detection principle governing every potentiometric sensor is introduced, and different state-of-the-art FET sensor structures are reviewed, followed by an analysis of electrolyte interfaces and their influence on sensor operation.

384 citations

Journal ArticleDOI
26 Jun 2017-ACS Nano
TL;DR: It is established that the commensurate increase of the noise amplitude originates from the intrinsic low-frequency characteristic of the sensor noise, dominated by number fluctuation, and that this capacitive signal amplification scheme does not improve the intrinsic detection limit of the dual-gate biosensors.
Abstract: Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor detection limit, which is inversely proportional to the signal-to-noise ratio (SNR). Here, we present a systematic experimental investigation of the SNR using ultrathin silicon transistors. Our sensors operate at low voltage and feature asymmetric front and back oxide capacitances with asymmetry factors of 1.4 and 2.3. We demonstrate that in the dual-gate configuration, the response of our bioFETs to the pH change increases proportional to the asymmetry factor and indeed exceeds the Nernst limit. Further, our results reveal that the noise amplitude also increases in proportion to the asymmetry factor. We establish that the commensurate increase of the noise amplitude originates from the intrinsic low-frequency characteristic of the sensor noise, dominated by nu...

29 citations

Journal ArticleDOI
TL;DR: In this paper, the authors reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing.

29 citations

Journal ArticleDOI
TL;DR: In this article, the authors demonstrate the first electrolyte gated field-effect transistor (FET) DNA biosensor implemented on commercially fabricated PCB in a planar layout, enabling label-free DNA detection.
Abstract: Lab-on-Chip is a technology that aims to transform the Point-of-Care (PoC) diagnostics field; nonetheless a commercial production compatible technology is yet to be established. Lab-on-Printed Circuit Board (Lab-on-PCB) is currently considered as a promising candidate technology for cost-aware but simultaneously high specification applications, requiring multi-component microsystem implementations, due to its inherent compatibility with electronics and the long-standing industrial manufacturing basis. In this work, we demonstrate the first electrolyte gated field-effect transistor (FET) DNA biosensor implemented on commercially fabricated PCB in a planar layout. Graphene ink was drop-casted to form the transistor channel and PNA probes were immobilized on the graphene channel, enabling label-free DNA detection. It is shown that the sensor can selectively detect the complementary DNA sequence, following a fully inkjet-printing compatible manufacturing process. The results demonstrate the potential for the effortless integration of FET sensors into Lab-on-PCB diagnostic platforms, paving the way for even higher sensitivity quantification than the current Lab-on-PCB state-of-the-art of passive electrode electrochemical sensing. The substitution of such biosensors with our presented FET structures, promises further reduction of the time-to-result in microsystems combining sequential DNA amplification and detection modules to few minutes, since much fewer amplification cycles are required even for low-abundance nucleic acid targets.

23 citations

Journal ArticleDOI
TL;DR: In this article, the hybridization of complementary DNA (deoxyribonucleic acid) strands by ISFETs implemented in a $0.35-mu $ m CMOS process was studied.
Abstract: CMOS (complementary metal oxide semiconductor) biosensors are promising to provide label-free and highly sensitive detection with high throughput. Ion-sensitive field effect transistors (ISFETs) can sensitively detect the charges carried by target analyte upon specific binding. This work studies the hybridization of complementary DNA (deoxyribonucleic acid) strands by ISFETs implemented in a $0.35-\mu $ m CMOS process. Three designs of different electrode and transistor sizes are implemented, with pH sensitivities measured between 27 to 32 mV/pH in terms of the threshold voltage shift. The increase of current in the p-type ISFETs due to hybridized target DNA molecules is successfully detected near femtomolar concentration, which is among the best sensing resolution for CMOS ISFETs.

15 citations