Author
C.D. Wilburn
Bio: C.D. Wilburn is an academic researcher from Micron Technology. The author has contributed to research in topics: Detector & Diode. The author has an hindex of 9, co-authored 17 publications receiving 688 citations.
Papers
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Université de Montréal20, National Academy of Sciences of Ukraine21, Tel Aviv University22, Kurchatov Institute23, Academy of Sciences of the Czech Republic24, SINTEF25, Royal Institute of Technology26, Micron Technology27, Charles University in Prague28, Technical University of Dortmund29
01 Jul 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
402 citations
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Charles University in Prague20, National Academy of Sciences of Ukraine21, Université de Montréal22, Tel Aviv University23, Kurchatov Institute24, Academy of Sciences of the Czech Republic25, SINTEF26, Royal Institute of Technology27, Micron Technology28, Technical University of Dortmund29
01 Jun 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
108 citations
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01 Dec 1991-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a method for biassing the strips of a silicon microstrip detector with a tunable dynamic resistance was developed, which allows the strip potentials to be tied to a fixed voltage, virtually independent of the strip leakage currents.
Abstract: A method has been developed for biassing the strips of a silicon microstrip detector with a tunable dynamic resistance. This allows the strip potentials to be tied to a fixed voltage, virtually independent of the strip leakage currents, whilst requiring no processing steps additional to those needed for a standard capacitively coupled detector. Results are presented for full sized detectors (3.3 cm × 6.0 cm) both measured on a probe station and equipped with VLSI readout (MX3) chips. Assemblies are currently undergoing beam tests at CERN with indications of very promising performance.
65 citations
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11 Aug 2008-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a large-area position sensitive silicon detector with four-corner readout was proposed, which consists of a square-shaped ion-implanted resistive anode framed by additional low-resistivity strips with resistances smaller than the anode surface resistance by a factor of two.
Abstract: We report on a recently developed large-area position-sensitive silicon detector type with four-corner readout. It consists of a square-shaped ion-implanted resistive anode framed by additional low-resistivity strips with resistances smaller than the anode surface resistance by a factor of two. The detector-position linearity, position resolution and energy resolution were measured with α-particles and accelerated heavy ions. In-beam experimental results reveal a position resolution below 1 mm (FWHM) and a very good non-linearity of less than 1% (rms). The energy resolution determined from 228Th alpha source measurements corresponding to an alpha line energy of 6778 keV is 155 and 68 keV (FWHM) for detectors with geometric areas of 62 mm×62 mm and 20 mm×20 mm, respectively.
25 citations
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01 Sep 1997-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, multiple floating guard-ring designs have been optimized for highvoltage operation of silicon detectors, and processed on both single and double-sided devices, and results are presented on their performance before and after being subjected to both ionising and non-ionising irradiation.
Abstract: Multiple floating guard-ring designs have been optimised for high-voltage operation of silicon detectors, and processed on both single- and double-sided devices. Results are presented on their performance before and after being subjected to both ionising and non-ionising irradiation.
24 citations
Cited by
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TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.
5,193 citations
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TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.
709 citations
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TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
607 citations
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University of Bonn1, CERN2, University College London3, University of Maryland, College Park4, University of Bologna5, University of California, Riverside6, Carleton University7, University of Tokyo8, Université de Montréal9, Rutherford Appleton Laboratory10, University of Chicago11, University of Hamburg12, Queen Mary University of London13, University of Birmingham14, Brunel University London15, Weizmann Institute of Science16, University of Freiburg17, Heidelberg University18
15 Jun 1992-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: The Monte Carlo program for the OPAL experiment at the LEP ee collider is described in this paper, and a description of the techniques used for simulating the various subdetectors of OPAL is given.
Abstract: The Monte Carlo program for the OPAL experiment at the LEP ee collider is described. This program is based on the GEANT simulation package. The general organization of the program is outlined, and a description is given of the techniques used for simulating the various subdetectors of OPAL. The performance of the program is illustrated by comparisons with recent data recorded by OPAL at LEP. (Submitted to Nucl. Instr. and Meth.) School of Physics and Space Research, University of Birmingham, Birmingham, B15 2TT, UK Dipartimento di Fisica dell' Universit a di Bologna and INFN, Bologna, 40126, Italy CNAF-INFN, Bologna, Italy Physikalisches Institut, Universitat Bonn, D-5300 Bonn 1, FRG Department of Physics, University of California, Riverside, CA 92521 USA Cavendish Laboratory, Cambridge, CB3 0HE, UK Carleton University, Dept of Physics, Colonel By Drive, Ottawa, Ontario K1S 5B6, Canada Centre for Research in Particle Physics, Carleton University, Ottawa, Ontario K1S 5B6, Canada CERN, European Organisation for Particle Physics, 1211 Geneva 23, Switzerland Enrico Fermi Institute and Department of Physics, University of Chicago, Chicago Illinois 60637, USA Fakult at f ur Physik, Albert Ludwigs Universitat, D-7800 Freiburg, FRG Universitat Hamburg/DESY, II Inst. f ur Experimental Physik, 2000 Hamburg 52, FRG Physikalisches Institut, Universitat Heidelberg, Heidelberg, FRG Queen Mary and West eld College, University of London, London, E1 4NS, UK University College London, London, WC1E 6BT, UK Department of Physics, Schuster Laboratory, The University, Manchester, M13 9PL, UK Department of Physics and Astronomy, University of Maryland, College Park, Maryland 20742, USA Laboratoire de Physique Nucl eaire, Universit e de Montr eal, Montr eal, Quebec, H3C 3J7, Canada Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, OX11 0QX, UK DPhPE, CEN Saclay, F-91191 Gif-sur-Yvette, France International Centre for Elementary Particle Physics, University of Tokyo, Tokyo 113, Japan Brunel University, Uxbridge, Middlesex, UB8 3PH UK Nuclear Physics Department, Weizmann Institute of Science, Rehovot, 76100, Israel Present address: EPFL, Lausanne, Switzerland Present address: Applied Silicon Inc, Ottawa, Canada Present address: Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, OX11 0QX, UK On leave from Birmingham University, Birmingham B15 2TT, UK Present address: Culham Laboratory, Culham, Oxfordshire, UK Present address: Meiji Gakuin University, Yokohama 244, Japan
264 citations
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TL;DR: In this article, cross sections for elastic production of J/Psi mesons in photoproduction and electroproduction are measured in electron proton collisions at HERA using an integrated luminosity of 55 pb^{-1}.
Abstract: Cross sections for elastic production of J/Psi mesons in photoproduction and electroproduction are measured in electron proton collisions at HERA using an integrated luminosity of 55 pb^{-1}. Results are presented for photon virtualities Q^2 up to 80 GeV^2. The dependence on the photon-proton centre of mass energy W_{gamma p} is analysed in the range 40 < \Wgp < 305 GeV in photoproduction and 40 < \Wgp < 160 GeV in electroproduction. The \Wgp dependences of the cross sections do not change significantly with Q^2 and can be described by models based on perturbative QCD. Within such models, the data show a high sensitivity to the gluon density of the proton in the domain of low Bjorken x and low Q^2. Differential cross sections d\sigma/dt, where t is the squared four-momentum transfer at the proton vertex, are measured in the range |t|<1.2 GeV^2 as functions of \Wgp and Q^2. Effective Pomeron trajectories are determined for photoproduction and electroproduction. The J/Psi production and decay angular distributions are consistent with s-channel helicity conservation. The ratio of the cross sections for longitudinally and transversely polarised photons is measured as a function of Q^2 and is found to be described by perturbative QCD based models.
238 citations