Author
C. E. Hurwitz
Bio: C. E. Hurwitz is an academic researcher. The author has contributed to research in topics: Avalanche photodiode & Single-photon avalanche diode. The author has an hindex of 1, co-authored 1 publications receiving 103 citations.
Papers
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TL;DR: Avalanche photodiodes for detection at 0.9-1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates as discussed by the authors.
Abstract: Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low‐bias quantum efficiencies of 45% have been measured.
104 citations
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TL;DR: In this paper, the authors introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes.
Abstract: Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized. Recent progress in single-photon detectors for quantum communication based on III–V compound semiconductor avalanche photodiodes is reviewed. Specifically, Jun Zhang and Jian-Wei Pan at the University of Science and Technology of China and their colleagues in the USA and Switzerland introduce technological advances for InGaAs/InP single-photon detector systems in the telecommunication band along with their associated applications in quantum communication. III–V single-photon avalanche diodes are the most practical tools available for detecting ultraweak near-infrared light. The scientists overview important parameters for evaluating the performance of detector systems based on single-photon avalanche diodes and describe the experimental characterization of these parameters. They also consider emerging techniques, including high-frequency gating at gigahertz rates and free-running operation using negative-feedback avalanche diodes. Finally, the future prospects of these devices are considered.
277 citations
TL;DR: In this article, a planar-type p-n junction is formed in an InP window layer, separated from a light absorbing InGaAsP layer, yielding an avalanche gain of 3000 and a dark current density as low a 1 μA/cm2 at 0.5 Vb.
Abstract: Distinct improvements in avalanche‐gain and dark‐current characteristics have been made in InGaAsP heterostructure APD’s. A planar‐type p‐n junction is formed in an InP window layer, separated from a light‐absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark‐current density as low a 1 μA/cm2 at 0.5 Vb.
195 citations
TL;DR: In this paper, the authors measured the impact ionization coefficients α (electrons) and β (holes) with different composition and temperature and found a resonant enhancement of the hole ionization coefficient for x = 0.065 (300 K) where the ratio α/α exceeds values of 20.
Abstract: The liquid-phase epitaxy and device fabrication of p-n and p-i-n Ga 1-x Al x Sb avalanche photodiodes is described. Breakdown voltages up to 95 V and dark currents of 10-4A/cm2have been obtained. With p-i-n diodes we have measured the impact ionization coefficients α (electrons) and β (holes) with different composition and temperature. A resonant enhancement of the hole ionization coefficient is found for x = 0.065 (300 K) where the ratio \beta/\alpha exceeds values of 20. This effect is attributed to impact ionization initiated by holes from the split-off valence band: if the spin orbit splitting Δ is equal to the bandgap energy E g , the threshold energy for hole initiated impact ionization reaches the smallest possible value ( E_{i} = E_{g} ) and the ionization process occurs with zero momentum. This leads to a strong increase of β at \Delta/E_{g} = 1 . The experimentally determined dependence of ionization coefficients on threshold energy is compared with theoretical expectations.
133 citations
TL;DR: In this article, the contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied and the specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance.
Abstract: The contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied. Among these metal combinations, Au/Ge + Ni and Au/Zn proved to be most suitable. The former on n-InP (n = 8 × 1017/cm3) and the latter on p-InP (p = 9 × 1017/cm3) exhibited specific contact resistances as low as 1.2 × 10−6 and 1.1 × 10−4 Ωcm2, respectively. The specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance. Furthermore, the resistances of metal contacts to InP were calculated as a function of doping concentration and were compared with the experimental results. The described contacting technique was successfully applied to the preparation of quaternary lasers.
124 citations
TL;DR: The arsenic composition depends on electron and hole ionization coefficients, α and β, in this article, where α is the electron ionization coefficient and β is the hole ionisation coefficient.
Abstract: The arsenic composition dependences of electron and hole ionization coefficients, α and β, in
103 citations