C. Hofmann

TL;DR: The observation of strong coupling of a single two-level solid-state system with a photon, as realized by a single quantum dot in a semiconductor microcavity, may provide a basis for future applications in quantum information processing or schemes for coherent control.

TL;DR: In this article, a planar cavity quantum electrodynamics (cQED) system based on a low density In0.3Ga 0.7As quantum layer placed as the active layer in a high quality planar AlAs/GaAs distributed Bragg reflector cavity grown by molecular beam epitaxy is described.

TL;DR: In this paper, the authors report on AlAs∕GaAs micropillar cavities with unprecedented quality factors based on high reflectivity distributed Bragg reflectors (DBRs).

TL;DR: Measurements of first- and second-order coherence of quantum-dot micropillar lasers together with a semiconductor laser theory show a broad threshold region for the observed high-beta microcavities.

TL;DR: In this article, the authors presented lasing in optically pumped high-Q micropillar cavity lasers with low thresholds and high β factors, which can achieve LAS in a single layer of low density In0.3Ga0.7As quantum dots as active region.