C
C. L. Gao
Researcher at Shanghai Jiao Tong University
Publications - 17
Citations - 2010
C. L. Gao is an academic researcher from Shanghai Jiao Tong University. The author has contributed to research in topics: Topological insulator & Superconductivity. The author has an hindex of 13, co-authored 17 publications receiving 1857 citations. Previous affiliations of C. L. Gao include Nanjing University.
Papers
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Journal ArticleDOI
Superconductivity in single-layer films of FeSe with a transition temperature above 100 K
TL;DR: In this paper, the authors reported the observation of high transition temperature (Tc) superconductivity in the FeSe/STO system by in situ 4-point probe (4PP) electrical transport measurement.
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The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films
Mei Xiao Wang,Canhua Liu,Jin-Peng Xu,Fang Yang,Lin Miao,Mengyu Yao,C. L. Gao,Chenyi Shen,Xucun Ma,Xi Chen,Z. A. Xu,Ying Liu,Shou-Cheng Zhang,Shou-Cheng Zhang,Dong Qian,Jin-Feng Jia,Qi-Kun Xue +16 more
TL;DR: In this paper, a superconducting TI/superconductor heterostructure was fabricated by growing dibismuth triselenide (Bi2Se3) thin films on superconductor niobium diselenide substrate.
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Spatial and energy distribution of topological edge states in single Bi(111) bilayer.
Fang Yang,Lin Miao,Zhengfei Wang,Mengyu Yao,Fengfeng Zhu,Y. R. Song,Mei Xiao Wang,Jin-Peng Xu,Alexei V. Fedorov,Zhigang Sun,Guojun Zhang,Canhua Liu,Feng Liu,Dong Qian,C. L. Gao,Jin-Feng Jia +15 more
TL;DR: In this article, angle-dependent van Hove singularities of a slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy were reported, showing that the energy difference of the two VHSs follows ΔE(vhs)∼ℏν(F)ΔK between 10° and 30°.
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Various atomic structures of monolayer silicene fabricated on Ag(111)
Zhi-Long Liu,Mei-Xiao Wang,Jin-Peng Xu,Jian-Feng Ge,Guy Le Lay,Patrick Vogt,Dong Qian,C. L. Gao,Canhua Liu,Jin-Feng Jia +9 more
TL;DR: In this paper, the authors obtained high-resolution images of silicene grown on Ag(111) and revealed its five phases, i.e., 4,×−4−−α, 4.e.
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Electronic structure of black phosphorus studied by angle-resolved photoemission spectroscopy
C. Q. Han,Mengyu Yao,Xuxu Bai,Lin Miao,Fengfeng Zhu,Dandan Guan,Shun Wang,C. L. Gao,Canhua Liu,Dong Qian,Yufeng Liu,Jin-Feng Jia +11 more
TL;DR: In this paper, a comprehensive experimental study of the electronic structures of black phosphors was performed and ARPES measurements of the band dispersions along both out-of-plane and in-plane directions were reported.