C. Liu

Bio: C. Liu is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Cathodoluminescence & Quantum well. The author has an hindex of 17, co-authored 38 publications receiving 1027 citations.

Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting

Abstract: Subwavelength scale antireflection moth-eye structures in silicon were fabricated by a wafer-scale nanoimprint technique and demonstrated an average reflection of 1% in the spectral range from 400 to 1000 nm at normal incidence. An excellent antireflection property out to large incident angles is shown with the average reflection below 8% at 60°. Pyramid array gave an almost constant average reflection of about 10% for an incident angle up to 45° and concave-wall column array produced an approximately linear relation between the average reflection and the incident angles. The technique is promising for improving conversion efficiencies of silicon solar cells.

GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

Abstract: GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 μm and a root mean square roughness of ∼1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.

Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays

Abstract: Using the method of photoresist reflow and inductively coupled plasma dry etching, we have fabricated microlens arrays in type-IIa natural single-crystal diamond, with diameters down to 10 μm. The surface profile of the microlenses was characterized by atomic force microscopy and was found to match well with a spherical shape, with a surface roughness of better than 1.2 nm. To characterize the optical properties of these diamond microlens arrays, a laser scanning reflection/transmission confocal microscopy technique has been developed. This technique enabled the surface profile of the microlenses to be measured simultaneously with optical parameters including focal length and spot size, opening up an application area for confocal microscopy.

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

Abstract: InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN∕GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5ns, with linewidths down to 650μeV (limited by the spectrometer resolution).

High-resolution cathodoluminescence hyperspectral imaging of nitride nanostructures.

Abstract: Hyperspectral cathodoluminescence imaging provides spectrally and spatially resolved information on luminescent materials within a single dataset. Pushing the technique toward its ultimate nanoscale spatial limit, while at the same time spectrally dispersing the collected light before detection, increases the challenge of generating low-noise images. This article describes aspects of the instrumentation, and in particular data treatment methods, which address this problem. The methods are demonstrated by applying them to the analysis of nanoscale defect features and fabricated nanostructures in III-nitride-based materials.

Adaptive liquid microlenses activated by stimuli-responsive hydrogels

Abstract: The trend towards miniaturization in optical imaging, diagnostics and lab-on-a-chip technology is creating a demand for sophisticated microlenses. A new type of smart liquid microlens has been developed that differs from most current devices in that it is self-focusing. The key component is a stimuli-responsive hydrogel integrated into a microfluidic system and acting as a container for a liquid droplet. The hydrogel simultaneously senses stimuli and actuates a change in droplet shape — and hence focal length. Stimuli can include biological and chemical agents and physical parameters. At this micrometre scale, pinned liquid-liquid interfaces are used to attain stable devices, and response times of ten to a few tens of seconds. Lenses can have virtually any focal length and are readily integrated into arrays. Despite its compactness, the human eye can easily focus on different distances by adjusting the shape of its lens with the help of ciliary muscles1. In contrast, traditional man-made optical systems achieve focusing by physical displacement of the lenses used. But in recent years, advances in miniaturization technology have led to optical systems that no longer require complicated mechanical systems to tune and adjust optical performance. These systems have found wide use in photonics, displays and biomedical systems. They are either based on arrays of microlenses with fixed focal lengths2,3,4,5, or use external control to adjust the microlens focal length6,7,8,9,10,11,12. An intriguing example is the tunable liquid lens, where electrowetting or external pressure manipulates the shape of a liquid droplet and thereby adjusts its optical properties. Here we demonstrate a liquid lens system that allows for autonomous focusing. The central component is a stimuli-responsive hydrogel13 integrated into a microfluidic system and serving as the container for a liquid droplet, with the hydrogel simultaneously sensing the presence of stimuli and actuating adjustments to the shape—and hence focal length—of the droplet. By working at the micrometre scale where ionic diffusion and surface tension scale favourably14, we can use pinned liquid–liquid interfaces to obtain stable devices and realize response times of ten to a few tens of seconds. The microlenses, which can have a focal length ranging from -∞ to +∞ (divergent and convergent), are also readily integrated into arrays that may find use in applications such as sensing, medical diagnostics and lab-on-a-chip technologies15,16,17,18,19.

X-ray diffraction of III-nitrides

Abstract: The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Abstract: We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/ AlInN multiple quantum wells ( QWs) suitable for near- infrared intersubband applications. A built- in electric field of 3.64MVcm(-1) solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain- free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack- free highly reflective AlInN/ GaN distributed Bragg reflectors ( R > 99%) and high quality factor microcavities ( Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature ( RT) lasing of a LM AlInN/ GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride- based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/ GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two- dimensional electron gas sheet carrier density ( n(s) similar to 2.6 x 10(13) cm(-2)) combined with a RT mobility mu(e) similar to 1170 cm(2) V-1 s(-1) and a low sheet resistance, R similar to 210 Omega square.

Azopolymer‐based micro‐ and nanopatterning for photonic applications

Abstract: Azopolymers comprise a unique materials platform, in which the photoisomerization reaction of azobenzene mole- cules can induce substantial material motions at molecular, mesoscopic, and even macroscopic length scales. In particular, amorphous azopolymer films can form stable surface relief pat- terns upon exposure to interfering light. This allows obtaining large-area periodic micro- and nanostructures in a remarkably simple way. Herein, recent progress in the development of azopolymer-based surface-patterning techniques for photonic applications is reviewed. Starting with a thin azopolymer layer, one can create a variety of photonic elements, such as diffrac- tion gratings, microlens arrays, plasmonic sensors, antireflec- tion coatings, and nanostructured light-polarization converters, either by using the azopolymer surface patterns themselves as optical elements or by utilizing them to microstructure or nanostructure other materials. Both of these domains are cov- ered, with the aim of triggering further research in this fasci- nating field of science and technology that is far from being harnessed. V C 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013, 00, 000-000