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C. R. Tellier

Bio: C. R. Tellier is an academic researcher from École nationale supérieure de mécanique et des microtechniques. The author has contributed to research in topics: Electrical resistivity and conductivity & Grain boundary. The author has an hindex of 14, co-authored 40 publications receiving 420 citations.

Papers
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Journal ArticleDOI
TL;DR: Theoretical two-dimensional etched shapes are derived from numerical simulations involving the equation of the dissolution slowness surface related to silicon crystals etched in aqueous KOH solutions.
Abstract: Theoretical two-dimensional etched shapes are derived from numerical simulations involving the equation of the dissolution slowness surface related to silicon crystals etched in aqueous KOH solutions. Theoretical changes in cross-sectional shapes of starting circular sections and in x′1 and [001] profilometry traces with the angle of cut, ϕo, are analysed in terms of the geometrical features of the slowness surface. The important role played by extrema in the dissolution slowness in determining the final two-dimensional etched shapes, is outlined. Theoretical etched shapes are systematically compared with the experimental shapes and the adequation of the proposed slowness surface is discussed.

39 citations

Journal ArticleDOI
TL;DR: In this paper, the authors studied the wet micromachining of 3D silicon structures in a water-TMAH 25 ¼ kg. The observed anisotropy of type 1 agrees with previous conclusions and the adequacy of the dissolution slowness surface and suggest future possible adjustments.
Abstract: This paper is devoted to the study of the wet micromachining of 3D silicon structures in a water–TMAH 25 wt.%. In the first part emphasis is placed on changes in shapes with orientation for membranes and mesa etched on various ( h h l ) planes. The observed anisotropy of type 1 agrees with previous conclusions. So, in the second part a previously proposed database is used to derive theoretical 3D etching shapes from the simulator TENSOSIM. Experimental and theoretical 3D etching shapes are analysed by combining dissolution criteria and stereographic projections of limiting facets. Finally we draw some conclusions on the adequacy of the dissolution slowness surface and suggest future possible adjustments.

34 citations

Journal ArticleDOI
TL;DR: In this article, a tensorial method is used to determine the equation of the representative surface of the dissolution slowness vector from a vectorial analysis of dissolution which in three dimensions is described in terms of an orientation dependent dissolution SLOWess vector.
Abstract: A tensorial method is used to determine the equation of the representative surface of the dissolution slowness vector from a vectorial analysis of the dissolution which in three dimensions is described in terms of an orientation dependent dissolution slowness vector. Calculations are derived for the trigonal class 32 and applied to singly rotated quartz crystals for which coefficients are evaluated up to the 16th order. The polar diagram of the dissolution slowness is presented for orientations,θ, in the range [−60°, 60°]. A numerical simulation of the dissolution based on the vectorial analysis is used to undertake a systematic comparison of the shape of the theoretical dissolution profiles with the experimentalZ′ traces of differently oriented singly rotated quartz plates. For BT-cut plates an excellent agreement is found between theoretical and experimental results. For the AT-cut plates withθ < 29° the agreement is not so good. However, since these AT plates are cut in various quartz crystals the deviation may be attributed to dispersion in the measurement of the etch rate. Thus combining the vectorial analysis of the dissolution with a tensorial representation of the slowness surface provides a useful method for accurately determining the shape of the dissolution profiles of quartz crystals.

29 citations

Journal ArticleDOI
TL;DR: In this article, a linear analytic expression for thin film conductivity and resistivity was proposed for a three-dimensional scattering model and from the mean free path representing the effect of electronic scattering on external surfaces.
Abstract: Starting from a three-dimensional scattering model and from the mean free path representing the effect of electronic scattering on external surfaces, a linear analytic expression is proposed for thin film conductivity and resistivity. Good agreement with experiment is found.

27 citations

Journal ArticleDOI
TL;DR: In this article, the micro-machining of various (h k 0) silicon plates in an aqueous KOH solution was studied, and the formation of limiting facets and concave or convex undercuttings were analyzed for (hk 0) membranes and mesa obtained starting with circular masks.
Abstract: The micro-machining of various (h k 0) silicon plates in an aqueous KOH solution was studied. Orientation effects, the formation of limiting facets and concave or convex undercuttings have been analysed for (h k 0) membranes and mesa obtained starting with circular masks. Procedures have been derived to predict 3D etching shapes using a tensorial model for the chemical etching. Predicted shapes for membranes have been found to closely agree with experimental shapes because of the important role played by limiting {1 1 1} facets. Theoretical general shapes for etched mesa were also in crude accord with experiments. Consequently some attempts have been made to identify limiting (h h l) planes which can participate to convex undercutting and to discuss the role of the dissolution slowness surface.

21 citations


Cited by
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Journal ArticleDOI
TL;DR: Silica Surface Features and Their Role in the Adsorption of Biomolecules: Computational Modeling and Experiments / Albert Rimola;Dominique Costa;Mariona Sodupe;Jean-François Lambert; Piero Ugliengo.
Abstract: Silica Surface Features and Their Role in the Adsorption of Biomolecules: Computational Modeling and Experiments / Albert Rimola;Dominique Costa;Mariona Sodupe;Jean-François Lambert;Piero Ugliengo. In: CHEMICAL REVIEWS. ISSN 0009-2665. STAMPA. 113:6(2013), pp. 4216-4313. Original Citation: Silica Surface Features and Their Role in the Adsorption of Biomolecules: Computational Modeling and Experiments

514 citations

Journal ArticleDOI
TL;DR: In this paper, the etching process of (1 − 0 − 0) silicon wafers in KOH and TMAH solutions with isopropyl alcohol (IPA) has been studied.
Abstract: The etching process of (1 0 0) silicon wafers in KOH and TMAH solutions with isopropyl alcohol (IPA) has been studied. The etching rates of different crystallographic planes in the wide range of solutions concentration have been estimated. The mutual relations of the etching rates of these planes have been analysed. Special emphasis was put on the roughness of silicon surface obtained in effect of etching. It was proved that IPA added to the solution improves the morphology of resulted surface. Detailed indications about the solution composition, ensuring satisfactory surface quality have been given. On the basis of experimental results and theoretical considerations, some attempts were made to explain the etching behaviour of silicon in KOH and TMAH solutions with IPA addition. It was suggested that TMA+ ions play similar role in the solution to IPA particles and participate in smoothening of the etched surface.

210 citations

Journal ArticleDOI
18 Jun 2009-Langmuir
TL;DR: A simple approach to wafer-scale self-cleaning antireflective hierarchical silicon structures is demonstrated by employing the KOH etching and silver catalytic etching to generate pyramidal hierarchical structures on the crystalline silicon wafer.
Abstract: A simple approach to wafer-scale self-cleaning antireflective hierarchical silicon structures is demonstrated. By employing the KOH etching and silver catalytic etching, pyramidal hierarchical structures were generated on the crystalline silicon wafer, which exhibit strong antireflection and superhydrophobic properties after fluorination. Furthermore, a flexible superhydrophobic substrate was fabricated by transferring the hierarchical Si structure to the NOA 63 film with UV-assisted imprint lithography. This method is of potential application in optical, optoelectronic, and wettability control devices.

131 citations

Patent
29 Jun 2006
TL;DR: In this article, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, and controlling the metallurgical gate length.
Abstract: Embodiments are an improved transistor structure and the method of fabricating the structure In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide

116 citations

Journal ArticleDOI
TL;DR: In this article, a review of the fabrication techniques for the realization of convex corners in silicon bulk micromachining technology is presented, which is restricted to the wet anisotropic etching process.
Abstract: Silicon bulk micromachining using the wet anisotropic etching process is widely employed for the development of commercial products such as an inkjet printer head, a pressure sensor, accelerometers, infrared sensors, etc using (1 0 0) silicon wafers. In wet anisotropic etching, the resultant shape and size of the microstructures are restricted by crystallographic properties of silicon. If structures such as seismic mass in an accelerometer are required to be created, convex corners will emerge in the etching process. Considerable deformation occurs at convex corners resulting in poor control on the shape and size of the microstructure. Various methods/techniques are developed to overcome the problem of undercutting at convex corners in a (1 0 0) silicon wafer. Here, we have reviewed the fabrication techniques for the realization of convex corners in silicon bulk micromachining technology. The review is restricted to the wet anisotropic etching process which is usually performed in potassium hydroxide solution, ethylenediamine pyrocatechol solution, tetramethylammonium hydroxide, etc. The corner compensation method is the most widely used technique for the fabrication of convex corners. Various types of corner compensating design have been proposed by different research groups. The corner compensation method gives nearly sharp corners. Recently developed techniques, which do not use any compensating design, give perfect convex corners. The limitations and advantages of all the techniques have been discussed. (Some figures in this article are in colour only in the electronic version)

98 citations