C.R. Tellier

Bio: C.R. Tellier is an academic researcher. The author has contributed to research in topics: Seebeck coefficient & Mean free path. The author has an hindex of 1, co-authored 1 publications receiving 43 citations.

Thermal conductivity modeling of copper and tungsten damascene structures

Abstract: Thermal conductivity of copper and tungsten nanowires, copper damascene structures are modeled theoretically on the basis of Boltzmann transport equation. The size-dependent thermal conductivities of the nanowires are obtained by taking into account interface scattering, grain boundary scattering, and interface roughness effect. Expressions for the thermal conductivity of thin films including the above mechanisms are extended to the case of rectangular cross-sectional nanowires. The fractal model is also used to predict the contribution of interface roughness to the thermal conductivity of nanowires. It is shown that the interface roughness is important for the nanowires with lateral dimensions down to the sub-30 nm region. Calculated thermal conductivities are in good agreement with the experimental data for copper and tungsten nanowires. Furthermore, it is found that the titanium nitride barrier layer obviously leads to further thermal conductivity reduction in the copper damascene structures.

Effect of defect structure on the electrical conduction mechanism in metallic thin films

Abstract: Thin metal films can be deposited in a number of different ways. As a result several types of defects or impurities are frozen in the film. In most practical cases films exhibit grain boundaries which play a decisive role in transport properties. This paper reviews the advances that have been made during the last five years in the field of theoretical description of electronic scattering at grain boundaries. Analytical expressions for the transport parameters (such as resistivity, temperature coefficient of resistivity and thermopower) of columnar, monocrystalline and polycrystalline films are derived. Care has been taken to give linearized equations for the transport phenomena. Methods for extracting grain parameters are outlined. Special attention is focused on correlated size effects. Imperfection or impurity effects on the film resistivity and thermopower are considered. Methods for determining the energetic parametersU andV and the componentS 1 of the thermopower associated with imperfections are proposed. Special emphasis is placed on procedures for identifying imperfections by simultaneous study of the restructuration processes induced by thermal ageing and of the changes in transport parameters on ageing.

Thickness dependence of the temperature coefficient of resistivity of polycrystalline films in a three-dimensional conduction model

Abstract: The temperature coefficient of the total film resistivity of thin polycrystalline films is calculated from the three-dimensional model of grain-boundaries. This study reveals that the analytical equations so derived are convenient tools to describe both, the grain-boundary and the thickness dependence of the t.c.r. of fine-grained films. The fit of the data obtained for polycrystalline zinc films is successful; values of the transmission coefficient t and specularity parameter p determined from measurements on annealed zinc films are reasonable. Der Temperaturkoeffizient des Gesamtschichtwiderstands dunner polykristalliner Schichten wird mit dem dreidimensionalen Modell der Korngrenzen berechnet. Die Untersuchung zeigt, das die so abgeleiteten analytischen Gleichungen geeignete Mittel sind, um sowohl die Korngrenze als auch die Dickenabhaangigkeit der t.c.r. von feingekornten Schichten zu beschreiben. Die An- passung der fur polykristalline Zinkschichten erhaltenen Werte ist erfolgreich; die Werte fur den Transmissionskoeffizienten t und des Reemissionsparameters p, die aus Messungen an getemperten Zinkschichten bestimmt werden, sind vernunftig.

Analytical expression for the total electrical conductivity of unannealed and annealed metal films

Abstract: Previous studies have shown that the Cottey function constitutes an alternative formulation for the Fuchs-Sondheimer size-effect function, provided that a new parameter is used. This result is used for calculating the effects of scattering at a grain boundary, and a good agreement with the Mayadas-Shatzkes model is found. When background, grain-boundary and external-surface scattering are simultaneously operative, a simple analytical expression for the electrical conductivity of polycrystalline, monocrystalline and columnar metal films can be obtained in the whole experimental domain and may conveniently replace the sophisticated expression of Mayadas and Shatzkes. This expression is similar to that obtained in the framework of the multidimensional models, previously presented. No limitation exists in the value of the electronic specular reflection coefficient, and the theoretical expression is related both to annealed and unannealed films.