C. Tivarus

Bio: C. Tivarus is an academic researcher from Ohio State University. The author has contributed to research in topics: Ballistic electron emission microscopy & Molecular beam epitaxy. The author has an hindex of 9, co-authored 14 publications receiving 705 citations.

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates

Abstract: The structural, morphological, and defect properties of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic step-graded buffers grown on InP substrates are investigated and compared. Two types of buffers were grown to span the identical range of lattice constants and lattice mismatch (∼1.1–1.2%) on (100) InP substrates by solid source molecular beam epitaxy. Symmetric relaxation of ∼90% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal InAs0.4P0.6 and In0.7Al0.3As overlayers of each graded buffer type, indicating nearly equal numbers of α and β dislocations were formed during the relaxation process and that the relaxation is near equilibrium and hence insensitive to asymmetric dislocation kinetics. Atomic force microscopy reveals extremely ordered crosshatch morphology and very low root mean square (rms) roughness of ∼2.2 nm for the InAsP relaxed buffers compared to the InAlAs relaxed buffers (∼7.3 nm) at the same degree of lattice mismatch with res...

High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy

Abstract: Relaxed, high-quality, compositionally step-graded InAsyP1−y layers with an As composition of y=0.4, corresponding to a lattice mismatch of ∼1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4×106 cm−2 within the InAs0.4P0.6 cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In0.7Al0.3As/InxAl1−xAs/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAsyP1−y graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III–V devices.

Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts

Abstract: Model metal-semiconductor nanostructure Schottky nanocontacts were made on cleaved heterostructures containing GaAs quantum wells (QWs) of varying width and were locally probed by ballistic electron emission microscopy. The local Schottky barrier was found to increase by $\ensuremath{\sim}0.140\text{ }\text{ }\mathrm{eV}$ as the QW width was systematically decreased from 15 to 1 nm, due mostly to a large ($\ensuremath{\sim}0.200\text{ }\text{ }\mathrm{eV}$) quantum-confinement increase to the QW conduction band. The measured barrier increase over the full 1 to 15 nm QW range was quantitatively explained when local ``interface pinning'' and image force lowering effects are also considered.

The CMS experiment at the CERN LHC

Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.

The physics and chemistry of the Schottky barrier height

Abstract: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

ATLAS pixel detector electronics and sensors

Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

Review of displacement damage effects in silicon devices

Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.