C
C. Wipf
Researcher at Leibniz Institute for Neurobiology
Publications - 46
Citations - 853
C. Wipf is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: BiCMOS & LDMOS. The author has an hindex of 13, co-authored 46 publications receiving 713 citations. Previous affiliations of C. Wipf include Innovations for High Performance Microelectronics.
Papers
More filters
Proceedings ArticleDOI
SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay
Bernd Heinemann,R. Barth,D. Bolze,J. Drews,Gunter Fischer,A. Fox,O. Fursenko,Thomas Grabolla,Ulrich Haak,D. Knoll,R. Kurps,M. Lisker,Steffen Marschmeyer,H. Rucker,D. Schmidt,J. Schmidt,M. A. Schubert,Bernd Tillack,C. Wipf,D. Wolansky,Yuji Yamamoto +20 more
TL;DR: In this paper, a SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented.
Proceedings ArticleDOI
SiGe HBT with fx/fmax of 505 GHz/720 GHz
Bernd Heinemann,Holger Rucker,R. Barth,F. Barwolf,J. Drews,Gunter Fischer,A. Fox,O. Fursenko,Thomas Grabolla,Frank Herzel,Jens Katzer,J. Korn,A. Kruger,P. Kulse,T. Lenke,Marco Lisker,Steffen Marschmeyer,A. Scheit,D. Schmidt,J. Schmidt,M. A. Schubert,Andreas Trusch,C. Wipf,D. Wolansky +23 more
TL;DR: An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented in this article.
Proceedings ArticleDOI
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
Josef Bock,Klaus Aufinger,Sabine Boguth,Claus Dahl,Herbert Knapp,Wolfgang Liebl,Dirk Manger,Thomas Meister,Andreas Pribil,Jonas Wursthorn,Rudolf Lachner,Bernd Heinemann,Holger Rucker,A. Fox,R. Barth,Georg Fischer,Steffen Marschmeyer,D. Schmidt,Andreas Trusch,C. Wipf +19 more
TL;DR: In this paper, the authors describe the development activities within the European funding project DOTSEVEN done by Infineon and IHP and demonstrate the suitability of IHP´s advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms.
Proceedings ArticleDOI
BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique
Mehmet Kaynak,Matthias Wietstruck,R. Scholz,J. Drews,R. Barth,K.-E. Ehwald,A. Fox,Ulrich Haak,D. Knoll,F. Korndorfer,Steffen Marschmeyer,K. Schulz,C. Wipf,D. Wolansky,Bernd Tillack,Kai Zoschke,T. Fischer,Yongbaek Kim,J. S. Kim,W-G. Lee,J. W. Kim +20 more
TL;DR: In this article, a back-side processed, back-to-front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140 GHz frequency band is presented.
Journal ArticleDOI
D–Band RF–MEMS SPDT Switch in a $0.13~\mu$ m SiGe BiCMOS Technology
TL;DR: In this paper, the authors presented a D-band (110-170 GHz) RF-MEMS based SPDT switch fabricated in a $0.13~\mu \text {m}$ SiGe BiCMOS technology.