C
Chandra Mouli
Researcher at Micron Technology
Publications - 216
Citations - 3356
Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.
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Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions
TL;DR: In this paper, a method of forming a semiconductor-on-insulator construction is described, in which a substrate is provided, and a band of material is formed within the band by one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
Patent
FinFET device with reduced DIBL
TL;DR: In this paper, the authors present a method for producing a retrograde dopant profile extending towards the channel region of a FinFET wafer, which can be selectively applied to selected portions of a wafer to tailor device characteristics, such as for memory cells.
Patent
Process for making a silicon-on-insulator ledge by implanting ions from silicon source
TL;DR: In this article, a process of making a partial silicon-on-insulator ledge is described, where a deep implantation region is created in a substrate, and an active device is achieved by the process.
Patent
Semiconductor packages, methods of forming semiconductor packages, and methods of cooling semiconductor dies
Chandra Mouli,Gurtej S. Sandhu +1 more
TL;DR: In this article, the authors present a method for cooling a semiconductor die in which coolant is forced through grooves in a backside of the die, and includes methods of making semiconductor packages utilizing carbon nanostructures (such as carbon nanotubes) as thermally conductive interface materials.
Patent
Transparent conductor based pinned photodiode
Chandra Mouli,Howard E. Rhodes +1 more
TL;DR: In this article, a gate oxide is formed over a doped, buried region in a semiconductor substrate, and a transparent conductor is formed on top of the gate oxide, which can be biased to reduce the need for a surface dopant in creating a pinned photodiode region.