Author
Chandra Mouli
Other affiliations: Aptina
Bio: Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.
Papers published on a yearly basis
Papers
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11 Mar 2018TL;DR: New experimental findings about the variability of the MOSFET threshold voltage (VT) introduced by hot carrier (HC) degradation are reported and a new physical model able to explain these phenomena is proposed and validated with numerical simulations.
Abstract: This paper reports new experimental findings about the variability of the MOSFET threshold voltage (V T ) introduced by hot carrier (HC) degradation. Previously, it was reported that the V t shift due to HC stress (ΔV t ) follows a Poissonian behavior, i.e. the standard deviation of ΔV t distribution is proportional to the square root of its mean value. Here, we show data coming from very different devices over a wide range of stress levels that deviates from the poissonian behavior under two particular conditions. First, in the initial stage of the HC stress ΔV t may exhibit a super-poissonian behavior, i.e. its standard deviation is related to the mean value yet by a power law but with an exponent larger than 0.5, that will then tend to the square root dependence as the stress continues. Second, and most notably, for very high stress levels ΔV t standard deviation tends to saturate to a maximum value, or even decrease in some cases, although HC degradation keeps increasing. A new physical model able to explain these phenomena is proposed and validated with numerical simulations. Quantitative agreement of statistical simulation with experimental data, hence predictive capability of the model, could be attained only by considering a realistic 3D geometry and the atomistic nature of both channel doping and HC induced trapped charge.
10 citations
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24 Apr 2015TL;DR: In this paper, a field effect transistor construction includes a semiconductive channel core, where a gate is proximate a periphery of the channel core and a gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the core periphery.
Abstract: A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.
10 citations
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26 Jan 2009TL;DR: In this paper, a floating-gate memory cell with carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitates ballistic injection of charge into the floating gate.
Abstract: Floating-gate memory cells having carbon nanotubes interposed between the substrate and the tunnel dielectric layer facilitate ballistic injection of charge into the floating gate. The carbon nanotubes may extend across the entire channel region or a portion of the channel region. For some embodiments, the carbon nanotubes may be concentrated near the source/drain regions. For some embodiments, the tunnel dielectric layer may adjoin the substrate in at least a portion of the channel region.
10 citations
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20 May 2013TL;DR: In this paper, the authors present a communication method that includes accessing an optical signal comprising photons to communicate information, accessing an electrical signal comprising electrical data carriers to communicate the information, and using a single interconnect, communicating the optical and electrical signals between a first spatial location and a second spatial location spaced from the same spatial location.
Abstract: Some embodiments include communication methods, methods of forming an interconnect, signal interconnects, integrated circuit structures, circuits, and data apparatuses. In one embodiment, a communication method includes accessing an optical signal comprising photons to communicate information, accessing an electrical signal comprising electrical data carriers to communicate information, and using a single interconnect, communicating the optical and electrical signals between a first spatial location and a second spatial location spaced from the first spatial location.
10 citations
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25 Aug 2004TL;DR: In this paper, a pixel cell comprises at least one transistor structure with at least two threshold voltages associated with the channel region, and an I-V characteristic of the transistor structure is determined at least in part by the threshold voltage.
Abstract: Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first and second leads respectively coupled to a source region on one side of the at least one channel region and a drain region on an opposite side of the at least one channel region. The transistor structure has at least two threshold voltages associated with the at least one channel region, and an I-V characteristic of the transistor structure is determined at least in part by the threshold voltages.
10 citations
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01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1,501 citations
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TL;DR: A signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data.
Abstract: We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model
789 citations
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01 Sep 2006
TL;DR: In this paper, a time-dependent algorithmic compensation function is applied to data output from a continuous analyte sensor to determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.
Abstract: Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.
690 citations
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TL;DR: A small camera device called Cyclops is developed that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.
514 citations
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02 Nov 2005TL;DR: Cyclops as discussed by the authors is a small camera device that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.
489 citations