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Author

Chandra Mouli

Other affiliations: Aptina
Bio: Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.


Papers
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Patent
Chandra Mouli1
28 Jul 2004
TL;DR: In this paper, a memory device includes an array of memory cells and peripheral devices, and at least some of the individual memory cells include carbonated portions that contain SiC, but some of these peripheral devices do not include any carbonated portion.
Abstract: A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel including a carbonated portion of a semiconductive substrate that contains SiC between the first and second sources/drains and a gate operationally associated with opposing sides of the channel.

7 citations

Patent
31 Oct 2013
TL;DR: In this article, multi-bit ferroelectric memory devices and methods of forming the same are provided. And one example method of forming a multi bit FD memory device can include forming a first FD material on a first side of a via, removing a material to expose a second side of the via, and forming second FD material at a different thickness compared to the first side.
Abstract: Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.

7 citations

Patent
12 Nov 1997
TL;DR: In this article, a polysilicon gate with a spacer etch and a cover layer is formed to close an opening to the recess so as to enclose a void therein, after which the base layer is implanted so that the recess isolates electrically active areas in the silicon base layer.
Abstract: Structures and methods are disclosed for insulating a polysilicon gate adjacent to an electrically active region with a silicon base layer. A layer of silicon nitride having a thickness in a range from about 100 Å to about 150 Å is conformally deposited over the polysilicon gate. A layer of silicon dioxide is formed over the layer of silicon nitride on the polysilicon gate. The layer of silicon dioxide is subjected to a spacer etch to form spacers upon the layer of silicon nitride and on lateral sidewalls of the polysilicon gate. A portion of the layer of silicon nitride situated between the polysilicon gate and the spacer is removed by an etching process that is selective to silicon dioxide and to polysilicon. The etch forms a recess defined between the polysilicon gate and each respective spacer. A cover layer is formed to close an opening to the recess so as to enclose a void therein. Alternatively, the etch can be a series of selective etches that extends the recess into the silicon base layer, after which the silicon base layer is implanted so that the recess isolates electrically active areas in the silicon base layer. A void is then enclosed below the opening to the recess within the silicon base layer by a cover layer deposited non-conformally thereover.

7 citations

Patent
Chandra Mouli1
11 Dec 2008
TL;DR: In this paper, the authors provided a transistor including a semiconductor substrate having a source and a drain, the source and the drain are spatially separated from the gate so that the gate is not over the drain and source, and the semiconductor material formed over the channel and dielectric spacers on each side of the gate.
Abstract: In accordance with the present techniques, there is provided a JFET device structures and methods for fabricating the same. Specifically, there is provided a transistor including a semiconductor substrate having a source and a drain. The transistor also includes a doped channel formed in the semiconductor substrate between the source and the drain, the channel configured to pass current between the source and the drain. Additionally, the transistor has a gate comprising a semiconductor material formed over the channel and dielectric spacers on each side of the gate. The source and the drain are spatially separated from the gate so that the gate is not over the drain and source.

7 citations

Patent
20 Jul 2006
TL;DR: In this paper, a process of making a partial silicon-on-insulator ledge is described, where a deep implantation region is created in a substrate, and an active device is achieved by the process.
Abstract: A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep implantation region. The deep implantation region is formed at various process stages according to embodiments. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.

6 citations


Cited by
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Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Journal ArticleDOI
TL;DR: A signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data.
Abstract: We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model

789 citations

Patent
01 Sep 2006
TL;DR: In this paper, a time-dependent algorithmic compensation function is applied to data output from a continuous analyte sensor to determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.
Abstract: Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.

690 citations

Journal Article
TL;DR: A small camera device called Cyclops is developed that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

514 citations

Proceedings ArticleDOI
02 Nov 2005
TL;DR: Cyclops as discussed by the authors is a small camera device that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

489 citations