C
Chandra Mouli
Researcher at Micron Technology
Publications - 216
Citations - 3356
Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.
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Patent
Semiconductor constructions, methods of forming semiconductor constructions, light-conducting conduits, and optical signal propagation assemblies
TL;DR: In this paper, the authors describe optical signal conduits having rare earth elements incorporated therein, such as erbium or cerium, which can be used as barrier material for optical signal transmission.
Proceedings ArticleDOI
Metal Gate Recessed Access Device (RAD) for DRAM Scaling
Nirmal Ramaswamy,Venkat Ananthan,David K. Hwang,Ravi Iyer,Chandra Mouli,Allen McTeer,Sanh D. Tang,Kunal R. Parekh,T. Owens,Young Pil Kim,Nanda Palaniappan,Jian Li,S. Groothuis,Gordon A. Haller,Shixin Wang +14 more
TL;DR: In this article, a functional DRAM with higher data retention characteristics than a planar access device has been demonstrated, using a metal gate recessed access device (RAD), where chemical vapor deposition (CVD) and atomic layer deposition (ALD) were used to deposit titanium nitride (TiN) and tantalum oxide (TaN), respectively.
Patent
Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems
TL;DR: In this paper, the memory arrays may contain vertical stacks of memory unit cells, with individual unit cells containing cross-point memory and at least one diode, and the diodes may be placed between the bitlines and the memory elements.
Patent
Semiconductor device having an active area partially isolated by a lateral cavity
TL;DR: In this article, a process of making a partial silicon-on-insulator ledge is described, where a deep implantation region is created in a substrate, and an active device is achieved by the process.
Patent
High density thyristor random access memory device and method
Suraj Mathew,Chandra Mouli +1 more
TL;DR: Memory devices and methods of making memory devices are shown in this paper, where folded and vertical memory devices for increased memory density are provided, allowing trace wiring in a memory array to be formed on or near a surface of a memory device.