scispace - formally typeset
Search or ask a question
Author

Chandra Mouli

Other affiliations: Aptina
Bio: Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.


Papers
More filters
Patent
13 Aug 2008
TL;DR: In this article, a movable switching element has a base disposed on a conductive pad, a body extending from the base, and an end laterally adjacent and spaced apart from the conductive contact.
Abstract: Semiconductor structures including a movable switching element having a base disposed on a conductive pad, a body extending from the base, and an end laterally adjacent and spaced apart from a conductive contact are disclosed. Upon application of a threshold voltage, the movable switching element may deform toward the conductive contact via an electrical field, establishing electrical contact between the conductive pad and the conductive contact. Various methods may be used to form such semiconductor structures, and switching devices including such semiconductor structures. Memory devices and electronic systems include such switching devices.

4 citations

Patent
Chandra Mouli1
30 Jun 2004
TL;DR: A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped and silicon-only channel layer over the buried channel as discussed by the authors.
Abstract: A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped, silicon-containing channel layer. The first and second channel layers may contain SiGe or, alternatively, Si only. Another transistor structure includes a first channel layer, a buried germanium channel, and a second, undoped channel layer containing silicon and germanium over the buried channel. A further transistor structure includes a first channel layer, a buried germanium channel, and a second channel layer containing compositionally graded SiGe over the buried channel. A still further transistor structure includes a first silicon layer, an undoped or homogeneously doped buried channel containing silicon and germanium, and a second silicon layer over the buried channel.

4 citations

Patent
30 Nov 2004
TL;DR: In this article, a semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor, is presented.
Abstract: A semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor. Semiconductor image sensor pixel cells using varied metal mesh filters may be arranged in a Bayer pattern for color imaging. As a result, the need for using conventional polymer color filters in image sensor applications is eliminated.

4 citations

Patent
26 Feb 2007
TL;DR: In this paper, a capacitor-less memory cell, memory device, system and process of forming the capacitorless memory cells includes forming the memory cell in an active area of a substantially physically isolated portion of the bulk semiconductor substrate, which is formed on the active area for coupling with a word line.
Abstract: A capacitor-less memory cell, memory device, system and process of forming the capacitor-less memory cell includes forming the memory cell in an active area of a substantially physically isolated portion of the bulk semiconductor substrate. A pass transistor is formed on the active area for coupling with a word line. The capacitor-less memory cell further includes a read/write enable transistor vertically configured along at least one vertical side of the active area and operable during a reading of a logic state with the logic state being stored as charge in a floating body area of the active area, causing different determinable threshold voltages for the pass transistor.

4 citations

Patent
19 Nov 2002
TL;DR: In this paper, the authors proposed a field effect transistor assembly which includes a channel region and an insulative material along the channel region, and a gate stack proximate the channel regions.
Abstract: The invention encompasses integrated circuitry which includes a semiconductive material substrate and a first field effect transistor supported by the substrate. The first field effect transistor comprises a first transistor gate assembly which includes a first layer of conductively doped semiconductive material and only one layer of conductive nitride. The integrated circuitry further comprises a second field effect transistor supported by the substrate. The second field effect transistor comprises a second transistor gate assembly which includes a second layer of conductively doped semiconductor material and at least two layers of conductive nitride. The invention also encompasses a field effect transistor assembly which includes a channel region and an insulative material along the channel region. The transistor assembly further includes a gate stack proximate the channel region. The gate stack includes a first conductive nitride layer separated from the channel region by the insulative material. The stack further includes a conductively doped semiconductive material proximate the first conductive nitride layer, and a second conductive nitride layer separated from the first conductive nitride layer by the conductively doped semiconductive material. Additionally, the invention encompasses methods of forming field effect transistors, and methods of forming integrated circuitry.

4 citations


Cited by
More filters
Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Journal ArticleDOI
TL;DR: A signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data.
Abstract: We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model

789 citations

Patent
01 Sep 2006
TL;DR: In this paper, a time-dependent algorithmic compensation function is applied to data output from a continuous analyte sensor to determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.
Abstract: Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.

690 citations

Journal Article
TL;DR: A small camera device called Cyclops is developed that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

514 citations

Proceedings ArticleDOI
02 Nov 2005
TL;DR: Cyclops as discussed by the authors is a small camera device that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

489 citations