C
Chandra Mouli
Researcher at Micron Technology
Publications - 216
Citations - 3356
Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.
Papers
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Patent
Ultrashallow photodiode using indium
TL;DR: In this paper, a p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss.
Patent
Methods of forming semiconductor-on-insulator constructions
TL;DR: In this paper, a method of forming a semiconductor-on-insulator construction is described, in which a substrate is provided, and the substrate is composed of one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
Patent
Method of manufacturing devices having vertical junction edge
Fernando Gonzalez,Chandra Mouli +1 more
TL;DR: In this paper, shallow trenches are formed in a substrate and filled with an oxide, such as doped polysilicon, and vertical junctions are formed between the poly-silicon and the exposed substrate at the trench edges such that during a thermal cycle, the dopedpolysilicon will out-diffuse doping elements into the adjacent single crystal silicon advantageously forming a diode extension having desirable properties.
Patent
Devices and systems with string drivers including high band gap material and methods of formation
TL;DR: In this article, a string driver comprising a channel region between a drain region and a source region is defined, and a gate region is adjacent and spaced from the high band gap material, where the string driver is configured for highvoltage operation in association with an array of charge storage devices.
Patent
Methods of making jfet devices with pin gate stacks
TL;DR: In this paper, the authors present devices and methods for providing JFET transistors with improved operating characteristics, including a PIN gate stack and a higher diode turn-on voltage.