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Author

Chandra Mouli

Other affiliations: Aptina
Bio: Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.


Papers
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Patent
Chandra Mouli1
18 May 2006
TL;DR: In this paper, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell.
Abstract: The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell. An aluminum oxide (Al2O3) is used as a gate dielectric, rather than a conventional gate oxide layer, to create a hole-rich accumulation region under and near the trench isolation region. Another exemplary embodiment of the invention provides an aluminum oxide layer utilized as a liner in a shallow trench isolation (STI) region to increase the effectiveness of the isolation region. The embodiments may also be used together at an isolation region.
Patent
17 Sep 2019
TL;DR: In this paper, an integrated structure having vertically-stacked conductive levels is proposed, where the channel material extends along the memory cell levels and the select device level, and extends into the conductively-doped semiconductor material.
Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels. Upper conductive levels are memory cell levels, and a lower conductive level is a select device level. Conductively-doped semiconductor material is under the select device level. Channel material extends along the memory cell levels and the select device level, and extends into the conductively-doped semiconductor material. A region of the channel material that extends into the conductively-doped semiconductor material is a lower region of the channel material and has a vertical sidewall. Tunneling material, charge-storage material and charge-blocking material extend along the channel material and are between the channel material and the conductive levels. The tunneling material, charge-storage material and charge-blocking material are not along at least a portion of the vertical sidewall of the lower region of the channel material, and the conductively-doped semiconductor material is directly against such portion. Some embodiments include methods of forming integrated structures.
Patent
02 Dec 2011
TL;DR: In this paper, a method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical SVC devices are described.
Abstract: A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.
Patent
Chandra Mouli1
15 Mar 2007
TL;DR: A stacked nonvolatile memory device uses amorphous silicon based thin film transistors (301) stacked vertically as discussed by the authors, each layer of transistors or cells is formed from a deposited a-Si channel region layer (315) having a predetermined concentration of carbon to form a carbon rich silicon film or silicon carbide film, depending on the carbon content.
Abstract: A stacked non-volatile memory device uses amorphous silicon based thin film transistors (301) stacked vertically. Each layer of transistors or cells is formed from a deposited a-Si channel region layer (315) having a predetermined concentration of carbon to form a carbon rich silicon film or silicon carbide film, depending on the carbon content. The dielectric stack (310) is formed over the channel region layer. In one embodiment, the dielectric stack is an ONO structure. The control gate (311) is formed over the dielectric stack. This structure is repeated vertically to form the stacked structure. In one embodiment, the carbon content of the channel region layer is reduced for each subsequently formed layer. The thin film transistor can be a FinFET.

Cited by
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Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Journal ArticleDOI
TL;DR: A signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data.
Abstract: We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model

789 citations

Patent
01 Sep 2006
TL;DR: In this paper, a time-dependent algorithmic compensation function is applied to data output from a continuous analyte sensor to determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.
Abstract: Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.

690 citations

Journal Article
TL;DR: A small camera device called Cyclops is developed that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

514 citations

Proceedings ArticleDOI
02 Nov 2005
TL;DR: Cyclops as discussed by the authors is a small camera device that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts.
Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

489 citations