Chandra Mouli

Bio: Chandra Mouli is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Field-effect transistor. The author has an hindex of 32, co-authored 216 publications receiving 3289 citations. Previous affiliations of Chandra Mouli include Aptina.

Using high-k dielectrics in isolation structures method, pixel and imager device

Abstract: An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the photodiode may be electrically isolated from the bulk substrate. This region fixes the depletion region so that it does not migrate toward the surface of the substrate or the STI region. By doing so, the region prevents charge from being depleted from the substrate and the accumulation region, reducing dark current.

Methods of forming integrated circuits

Abstract: This invention includes methods of forming integrated circuits, and includes DRAM circuitry memory cells. In one implementation, a method of forming an integrated circuit includes forming a trench isolation mask over a semiconductor substrate. The trench isolation mask defines an active area region and a trench isolation region. An ion implantation is conducted into semiconductive material of the substrate to form a buried region within active area of the substrate. The buried region has a first edge received proximate an edge of the trench isolation region. Using the trench isolation mask, etching is conducted into semiconductive material of the substrate to form an isolation trench. After the ion implantation and after forming the isolation trench, insulative material is formed within the buried region and insulative material is deposited to within the isolation trench. The insulative material received within the isolation trench joins with the insulative material formed within the buried region.

Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation

Abstract: A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

Field effect transistor assemblies, integrated circuitry, and methods of forming field effect transistors and integrated circuitry

Abstract: The invention encompasses integrated circuitry which includes a semiconductive material substrate and a first field effect transistor supported by the substrate. The first field effect transistor comprises a first transistor gate assembly which includes a first layer of conductively doped semiconductive material and only one layer of conductive nitride. The integrated circuitry further comprises a second field effect transistor supported by the substrate. The second field effect transistor comprises a second transistor gate assembly which includes a second layer of conductively doped semiconductor material and at least two layers of conductive nitride. The invention also encompasses a field effect transistor assembly which includes a channel region and an insulative material along the channel region. The transistor assembly further includes a gate stack proximate the channel region. The gate stack includes a first conductive nitride layer separated from the channel region by the insulative material. The stack further includes a conductively doped semiconductive material proximate the first conductive nitride layer, and a second conductive nitride layer separated from the first conductive nitride layer by the conductively doped semiconductive material. Additionally, the invention encompasses methods of forming field effect transistors, and methods of forming integrated circuitry.

Isolated structure and method of fabricating such a structure on a substrate

Abstract: A method of forming an isolated structure of sufficient size to permit the fabrication of an active device thereon is comprised of the steps of depositing a gate oxide layer on a substrate. Material, such as a polysilicon layer and a nitride layer, is deposited on the gate oxide layer to protect the gate oxide layer. An active area is defined, typically by patterning a layer of photoresist. The protective material, the layer of oxide, and finally the substrate are etched to form a trench around the active area. Spacers are formed on the sides of the active area. The substrate is etched to deepen the trench around the active area to a point below the spacers. The substrate is oxidized at the bottom of the trench and horizontally under the active area to at least partially isolate the active area from the substrate. Oxide spacers are formed on the sides of the active area to fill exposed curved oxide regions and the remainder of the trench may be filled with an oxide.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Practical Poissonian-Gaussian Noise Modeling and Fitting for Single-Image Raw-Data

Abstract: We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model

Systems and methods for processing analyte sensor data

Abstract: Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.

Cyclops: In Situ Image Sensing and Interpretation in Wireless Sensor Networks

Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

Cyclops: in situ image sensing and interpretation in wireless sensor networks

Abstract: Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.