An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

We present a simple and usable noise model for the raw-data of digital imaging sensors This signal-dependent noise model, which gives the pointwise standard-deviation of the noise as a function of the expectation of the pixel raw-data output, is composed of a Poissonian part, modeling the photon sensing, and Gaussian part, for the remaining stationary disturbances in the output data We further explicitly take into account the clipping of the data (over- and under-exposure), faithfully reproducing the nonlinear response of the sensor We propose an algorithm for the fully automatic estimation of the model parameters given a single noisy image Experiments with synthetic images and with real raw-data from various sensors prove the practical applicability of the method and the accuracy of the proposed model

/pdf/practical-poissonian-gaussian-noise-modeling-and-fitting-for-4cn04dppj4.pdf

Practical Poissonian-Gaussian Noise Modeling and Fitting for Single-Image Raw-Data

Systems and methods for applying time-dependent algorithmic compensation functions to data output from a continuous analyte sensor. Some embodiments determine a time since sensor implantation and/or whether a newly initialized sensor has been used previously.

Systems and methods for processing analyte sensor data

Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena. To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

Cyclops: In Situ Image Sensing and Interpretation in Wireless Sensor Networks

Despite their increasing sophistication, wireless sensor networks still do not exploit the most powerful of the human senses: vision. Indeed, vision provides humans with unmatched capabilities to distinguish objects and identify their importance. Our work seeks to provide sensor networks with similar capabilities by exploiting emerging, cheap, low-power and small form factor CMOS imaging technology. In fact, we can go beyond the stereo capabilities of human vision, and exploit the large scale of sensor networks to provide multiple, widely different perspectives of the physical phenomena.To this end, we have developed a small camera device called Cyclops that bridges the gap between the computationally constrained wireless sensor nodes such as Motes, and CMOS imagers which, while low power and inexpensive, are nevertheless designed to mate with resource-rich hosts. Cyclops enables development of new class of vision applications that span across wireless sensor network. We describe our hardware and software architecture, its temporal and power characteristics and present some representative applications.

http://www.kilopixel.net/publications/sensys2005.pdf

Cyclops: in situ image sensing and interpretation in wireless sensor networks

A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.

Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors

Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second electrodes. The dielectric material may be configured to conduct current from the first electrode to the second electrode when a first voltage is applied across the first electrode and the second electrode. Furthermore, the dielectric material may be configured to inhibit current from flowing from the second electrode to the first electrode when a second voltage having a polarity opposite that of a polarity of the first voltage is applied across the first electrode and the second electrode. The diode material may comprise a plurality of layers of different dielectric materials arranged in order of increasing barrier height. Quantum wells may form at junctions of layers of the plurality responsive to the first voltage. Some embodiments include diode forming methods.

Selectively Conducting Devices, Diode Constructions, Constructions, and Diode Forming Methods

Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods

An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.

Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels

A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line connected to the gate structure. The memory device does not require an additional capacitive storage element.

Chandra Mouli

Papers

Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors

Selectively Conducting Devices, Diode Constructions, Constructions, and Diode Forming Methods

Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods

Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels

1T/0C RAM cell with a wrapped-around gate device structure