Changjae Yang

TL;DR: In this article, the effects of low temperature (LT) Ge buffer layers on the two-step Ge growth by varying the thickness of buffer layers were investigated, and it was concluded that the minimum thickness of the buffer layer was required to grow uniform 2-step ge layers on Si and its quality was subject to the thickness.

TL;DR: In this article, self-assembled InAs quantum dots (QDs) on GaAs substrates were grown by metal organic chemical vapor deposition with periodic AsH3 interruption, and the growth surface was modulated between As-stabilized surface and In-stable one, resulting in complete suppression of relaxed large island formation and significant improvement in photoluminescence intensity.

TL;DR: In this paper, the optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL), and two peaks were observed around 1.74 and 1.85 eV at 19 K.

TL;DR: Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.

TL;DR: In this paper, the effect of interfacial phases on the electrical properties of SiO 2 /InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements.