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Changqiang Chen
Researcher at University of Illinois at Urbana–Champaign
Publications - 51
Citations - 2561
Changqiang Chen is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Nanocomposite & Thin film. The author has an hindex of 20, co-authored 46 publications receiving 2299 citations. Previous affiliations of Changqiang Chen include Northwestern University & Chinese Academy of Sciences.
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Size dependence of Young's modulus in ZnO nanowires.
TL;DR: A core-shell composite NW model in terms of the surface stiffening effect correlated with significant bond length contractions occurred near the {1010} free surfaces is proposed to explore the origin of the size dependence, and it is possible to estimate the size-related elastic properties of GaN nanotubes and relative nanostructures by using this model.
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Effects of size on the mechanical response of metallic glasses investigated through in situ TEM bending and compression experiments
TL;DR: In this article, the authors performed quantitative bending and compression tests on micropillars made of two different amorphous alloys, with tip diameters ranging from 93 to 645 nm, in situ in a transmission electron microscope (TEM).
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Intrinsic and extrinsic size effects in the deformation of metallic glass nanopillars
TL;DR: In this paper, the deformation behavior of nanosized pillars with diameters ranging from 90 to 600 nm of four amorphous alloys, including Zr50Ti16.5Cu15Ni18.5, Zr61.8Cu18Ni10.2Al10 and Al86Ni9Y5, were fabricated and tested in situ in a transmission electron microscope.
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Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering
Yutao Pei,Changqiang Chen,K. P. Shaha,J.Th.M. De Hosson,James W. Bradley,S.A. Voronin,M. Čada +6 more
TL;DR: In this paper, the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering was investigated using high-resolution transmission electron microscopy techniques.
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Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide
Yeseul Lee,Shih Han Lo,Changqiang Chen,Hui Sun,Duck Young Chung,Thomas C. Chasapis,Ctirad Uher,Vinayak P. Dravid,Mercouri G. Kanatzidis +8 more
TL;DR: An increased performance for antimony-doped lead selenide with a thermoelectric figure of merit of ~1.5 at 800 K is reported.