C
Charalabos A. Dimitriadis
Researcher at Aristotle University of Thessaloniki
Publications - 266
Citations - 4651
Charalabos A. Dimitriadis is an academic researcher from Aristotle University of Thessaloniki. The author has contributed to research in topics: Thin-film transistor & Polycrystalline silicon. The author has an hindex of 34, co-authored 266 publications receiving 4372 citations. Previous affiliations of Charalabos A. Dimitriadis include University of Manchester & National Technical University of Athens.
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Electronic properties of semiconducting FeSi2 films
Charalabos A. Dimitriadis,Jürgen H. Werner,Stergios Logothetidis,Martin Stutzmann,J. Weber,R. Nesper +5 more
TL;DR: In this article, X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800 −900 ǫ°C, and photothermal deflection spectroscopy reveals a direct band gap of 0.85 eV.
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A SEM-EBIC minority-carrier diffusion-length measurement technique
TL;DR: In this paper, a SEM-EBIC minority-carrier diffusion-length measurement technique is described, whereby an arrangement is used such that the electron beam is incident normal to the charge-collecting barrier; the barrier may be either that of a Schottky diode or of a shallow p-n junction.
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Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures
TL;DR: In this paper, the defect properties of undoped low-pressure chemical-vapor-deposited (LPCVD) polysilicon films have been investigated by capacitance techniques on a simple metal-oxide-semiconductor (MOS) capacitor structure.
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Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs
A. Tsormpatzoglou,Charalabos A. Dimitriadis,Raphael Clerc,Quentin Rafhay,G. Pananakakis,Gerard Ghibaudo +5 more
TL;DR: In this paper, a simple analytical expression of the 2D potential distribution along the channel of silicon symmetrical double-gate (DG) MOSFETs in weak inversion is derived.
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Combined electrical and mechanical properties of titanium nitride thin films as metallization materials
Panos Patsalas,Costas A. Charitidis,Stergios Logothetidis,Charalabos A. Dimitriadis,O. Valassiades +4 more
TL;DR: In this paper, the effects of the substrate bias voltage and deposition temperature on the optical, electrical, and mechanical properties of TiNx thin films were studied and it was found a strong correlation between the electrical properties of the films and their optical properties.