This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

We report the measurement of the thermal conductivity of a suspended single-layer graphene. The room temperature values of the thermal conductivity in the range ∼(4.84 ± 0.44) × 103 to (5.30 ± 0.48) × 103 W/mK were extracted for a single-layer graphene from the dependence of the Raman G peak frequency on the excitation laser power and independently measured G peak temperature coefficient. The extremely high value of the thermal conductivity suggests that graphene can outperform carbon nanotubes in heat conduction. The superb thermal conduction property of graphene is beneficial for the proposed electronic applications and establishes graphene as an excellent material for thermal management.

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Superior Thermal Conductivity of Single-Layer Graphene

When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality1,2. Indeed, a distinctive half-integer quantum Hall effect has been predicted3,4,5 theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure6,7. Recent advances in micromechanical extraction and fabrication techniques for graphite structures8,9,10,11,12 now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

https://arxiv.org/pdf/cond-mat/0509355.pdf

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

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Topological insulators and superconductors

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. These states are possible due to the combination of spin-orbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A three-dimensional (3D) topological insulator supports novel spin-polarized 2D Dirac fermions on its surface. In this Colloquium the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topological insulators have been observed. Transport experiments on $\mathrm{Hg}\mathrm{Te}∕\mathrm{Cd}\mathrm{Te}$ quantum wells are described that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. Experiments on ${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$, ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$, and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ are then discussed that establish these materials as 3D topological insulators and directly probe the topology of their surface states. Exotic states are described that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions and may provide a new venue for realizing proposals for topological quantum computation. Prospects for observing these exotic states are also discussed, as well as other potential device applications of topological insulators.

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Colloquium: Topological insulators

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

https://arxiv.org/pdf/cond-mat/0411737.pdf

Quantum spin Hall effect in graphene

The quantum spin Hall (QSH) phase is a time reversal invariant electronic state with a bulk electronic band gap that supports the transport of charge and spin in gapless edge states. We show that this phase is associated with a novel Z2 topological invariant, which distinguishes it from an ordinary insulator. The Z2 classification, which is defined for time reversal invariant Hamiltonians, is analogous to the Chern number classification of the quantum Hall effect. We establish the Z2 order of the QSH phase in the two band model of graphene and propose a generalization of the formalism applicable to multiband and interacting systems.

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Z-2 Topological Order and the Quantum Spin Hall Effect

We study the proximity effect between an s-wave superconductor and the surface states of a strong topological insulator. The resulting two-dimensional state resembles a spinless px+ipy superconductor, but does not break time reversal symmetry. This state supports Majorana bound states at vortices. We show that linear junctions between superconductors mediated by the topological insulator form a nonchiral one-dimensional wire for Majorana fermions, and that circuits formed from these junctions provide a method for creating, manipulating, and fusing Majorana bound states.

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Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

We study three-dimensional generalizations of the quantum spin Hall (QSH) effect. Unlike two dimensions, where a single ${Z}_{2}$ topological invariant governs the effect, in three dimensions there are 4 invariants distinguishing 16 phases with two general classes: weak (WTI) and strong (STI) topological insulators. The WTI are like layered 2D QSH states, but are destroyed by disorder. The STI are robust and lead to novel ``topological metal'' surface states. We introduce a tight binding model which realizes the WTI and STI phases, and we discuss its relevance to real materials, including bismuth.

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Charles L. Kane

Papers

Colloquium: Topological insulators

Quantum spin Hall effect in graphene

Z-2 Topological Order and the Quantum Spin Hall Effect

Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

Topological insulators in three dimensions.