Chaun Jang

Bio: Chaun Jang is an academic researcher from Korea Institute of Science and Technology. The author has contributed to research in topics: Graphene & Scattering. The author has an hindex of 16, co-authored 33 publications receiving 7246 citations. Previous affiliations of Chaun Jang include University of Maryland, College Park.

Intrinsic and extrinsic performance limits of graphene devices on SiO2.

Abstract: The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2 microm and an intrinsic mobility limit of 2 x 105 cm2 V-1 s-1. If realized, this mobility would exceed that of InSb, the inorganic semiconductor with the highest known mobility ( approximately 7.7 x 104 cm2 V-1 s-1; ref. 9) and that of semiconducting carbon nanotubes ( approximately 1 x 105 cm2 V-1 s-1; ref. 10). A strongly temperature-dependent resistivity contribution is observed above approximately 200 K (ref. 8); its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate and limit the room-temperature mobility to approximately 4 x 104 cm2 V-1 s-1, indicating the importance of substrate choice for graphene devices.

Charged-impurity scattering in graphene

Abstract: Valuable insight into the influence of scattering from impurities on the peculiar electronic properties of graphene are gained by a systematic study of how its conductivity changes with increasing concentration of potassium ions deposited on its surface. Since the initial demonstration of the ability to experimentally isolate a single graphene sheet1, a great deal of theoretical work has focused on explaining graphene’s unusual carrier-density-dependent conductivity σ(n), and its minimum value (σmin) of nearly twice the quantum unit of conductance (4e2/h) (refs 1, 2, 3, 4, 5, 6). Potential explanations for such behaviour include short-range disorder7,8,9,10, ‘ripples’ in graphene’s atomic structure11,12 and the presence of charged impurities7,8,13,14,15,16,17,18. Here, we conduct a systematic study of the last of these mechanisms, by monitoring changes in electronic characteristics of initially clean graphene19 as the density of charged impurities (nimp) is increased by depositing potassium atoms onto its surface in ultrahigh vacuum. At non-zero carrier density, charged-impurity scattering produces the widely observed linear dependence1,2,3,4,5,6 of σ(n). More significantly, we find that σmin occurs not at the carrier density that neutralizes nimp, but rather the carrier density at which the average impurity potential is zero15. As nimp increases, σmin initially falls to a minimum value near 4e2/h. This indicates that σmin in the present experimental samples1,2,3,4,5,6 is governed not by the physics of the Dirac point singularity20,21, but rather by carrier-density inhomogeneities induced by the potential of charged impurities6,8,14,15.

Defect scattering in graphene.

Abstract: Irradiation of graphene on ${\mathrm{SiO}}_{2}$ by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman $D$ band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than $4{e}^{2}/\ensuremath{\pi}h$, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.

Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

Abstract: Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS2) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p–n junctions of MoS2, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic p-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopa...

The electronic properties of graphene

Abstract: This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

Graphene and Graphene Oxide: Synthesis, Properties, and Applications

Abstract: There is intense interest in graphene in fields such as physics, chemistry, and materials science, among others. Interest in graphene's exceptional physical properties, chemical tunability, and potential for applications has generated thousands of publications and an accelerating pace of research, making review of such research timely. Here is an overview of the synthesis, properties, and applications of graphene and related materials (primarily, graphite oxide and its colloidal suspensions and materials made from them), from a materials science perspective.