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Dissertation•
17 Jun 2014TL;DR: In this article, the authors focus on the conception, realisation, and test of a photodetecteur integre de photoderiversion for the detection of fluorescence.
Abstract: Ce travail de these a pour but de developper un dispositif base autour d'un dispositif integre de photodetection pour des applications biomedicales necessitant une grande sensibilite de detection et une discrimination spectrale (selectivite). Ce dispositif peut etre applique, par exemple, a la mesure simultanee de plusieurs marqueurs fluorescents dans les laboratoires sur puce mettant en œuvre de tres faibles volumes de reactifs (inferieurs au microlitre). Le travail de these se focalise sur la conception, la realisation et le test de ce dispositif integre de photodetection. Ce travail se decline selon deux axes principaux : d'une part, la conception d'un photodetecteur CMOS avec preamplificateurs integres, et d'autre part la conception, la realisation et la caracterisation de filtres optiques integres performants pour la detection de fluorescence
8 citations
Journal Article•
TL;DR: The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this paper, which was manufactured using Aluminum first that is widely used in conventional semiconductor device process.
Abstract: The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change(, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.
2 citations
07 May 2010
TL;DR: In this paper, a linear array of 128 active pixel sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated high-resolution microspectrometer.
Abstract: A linear array of 128 Active Pixel Sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated highresolution microspectrometer. The optical requirements imposed by the LVOF result in photodetectors with small pitch and large length in the direction normal to the dispersed spectrum (7.2?m×300?m). The specific characteristics of the readout are the small pitch, low optical signals (typically a photocurrent of 100fA~1pA) and a much longer integration time as compared to regular video (typically 100?s~63s). These characteristics enable a very different trade-off between SNR and integration time and IC-compatibility. The system discussed in this paper operates in the visible part of the spectrum. The prototype is fabricated in the AMIS 0.35?m A/D CMOS technology.
1 citations