C
Cheng-Cheng Liu
Researcher at Beijing Institute of Technology
Publications - 109
Citations - 9480
Cheng-Cheng Liu is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Topological insulator & Silicene. The author has an hindex of 33, co-authored 99 publications receiving 7944 citations. Previous affiliations of Cheng-Cheng Liu include Chinese Academy of Sciences & University of Texas at Dallas.
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Quantum spin Hall effect in silicene and two-dimensional germanium.
TL;DR: It is demonstrated that silicene with topologically nontrivial electronic structures can realize the quantum spin Hall effect (QSHE) by exploiting adiabatic continuity and the direct calculation of the Z(2) topological invariant.
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Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin
TL;DR: In this article, the authors derived the low energy effective Hamiltonian involving spin-orbit coupling (SOC) for silicene, which is the analog to the graphene quantum spin Hall effect (QSHE) Hamiltonian.
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Epitaxial growth of single-domain graphene on hexagonal boron nitride
Wei Yang,Guorui Chen,Zhiwen Shi,Cheng-Cheng Liu,Cheng-Cheng Liu,Lianchang Zhang,Lianchang Zhang,Guibai Xie,Meng Cheng,Duoming Wang,Rong Yang,Dongxia Shi,Kenji Watanabe,Takashi Taniguchi,Yugui Yao,Yuanbo Zhang,Guangyu Zhang +16 more
TL;DR: The epitaxial growth of single-domain graphene on h-BN by a plasma-assisted deposition method and the synthesis method is potentially applicable on other flat surfaces could open new ways of graphene band engineering through epitaxy on different substrates.
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Rise of silicene: A competitive 2D material
Jijun Zhao,Hongsheng Liu,Zhi-Ming Yu,Ruge Quhe,Ruge Quhe,Si Zhou,Yangyang Wang,Cheng-Cheng Liu,Hongxia Zhong,Nannan Han,Jing Lu,Yugui Yao,Kehui Wu +12 more
TL;DR: In this paper, a comprehensive review of all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations is presented.
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Evidence for Dirac fermions in a honeycomb lattice based on silicon.
Lan Chen,Cheng-Cheng Liu,Baojie Feng,X. G. He,Peng Cheng,Zijing Ding,Sheng Meng,Yugui Yao,Yugui Yao,Kehui Wu +9 more
TL;DR: From the QPI patterns derived, a linear energy-momentum dispersion and a large Fermi velocity are derived, which prove the existence of Dirac fermions in silicene.