C
Cheng Liu
Researcher at Hong Kong University of Science and Technology
Publications - 45
Citations - 1811
Cheng Liu is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Gate dielectric & Breakdown voltage. The author has an hindex of 21, co-authored 45 publications receiving 1471 citations. Previous affiliations of Cheng Liu include University of Hong Kong.
Papers
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Journal ArticleDOI
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
TL;DR: Optimal gate drive conditions are proposed to provide sufficient gate over-drive to minimize the impact of the $V_{{\rm{TH}}}$ under switching operations.
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High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation
Shu Yang,Zhikai Tang,King-Yuen Wong,Yu-Syuan Lin,Cheng Liu,Yunyou Lu,Sen Huang,Kevin J. Chen +7 more
TL;DR: In this article, an in situ low-damage pre-gate treatment technology was proposed to realize high-quality Al2O3/III-nitride (III-N) interface.
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Al 2 O 3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
TL;DR: In this article, a monocrystalline AlN interfacial layer is inserted between the amorphous Al�Ω 2�O� 3cffff gate dielectric and the GaN channel to prevent the formation of detrimental Ga-O bonds.
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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation
TL;DR: An effective passivation technique that yields low off-state leakage and low current collapse simultaneously in highvoltage (600-V) AlGaN/GaN high-electron-mobility transistors (HEMTs) is reported in this article.
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Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
Mengyuan Hua,Cheng Liu,Shu Yang,Shenghou Liu,Kai Fu,Zhihua Dong,Yong Cai,Baoshun Zhang,Kevin J. Chen +8 more
TL;DR: In this paper, the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures were systematically investigated.