C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Digh Hisamoto,Wen-Chin Lee,J. Kedzierski,Hideki Takeuchi,K. Asano,C. Kuo,Erik H. Anderson,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +9 more
TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
Journal ArticleDOI
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai,Sujay B. Desai,Surabhi R. Madhvapathy,Surabhi R. Madhvapathy,Angada B. Sachid,Angada B. Sachid,Juan Pablo Llinas,Juan Pablo Llinas,Qingxiao Wang,Geun Ho Ahn,Geun Ho Ahn,Gregory Pitner,Moon J. Kim,Jeffrey Bokor,Jeffrey Bokor,Chenming Hu,H.-S. Philip Wong,Ali Javey,Ali Javey +18 more
TL;DR: Molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated, which exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106.
Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
TL;DR: In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.
Journal ArticleDOI
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
TL;DR: In this paper, a unified flicker noise model which incorporates both the number fluctuation and the correlated surface mobility fluctuation mechanism is discussed, which can unify the noise data reported in the literature, without making any ad hoc assumption on the noise generation mechanism.
Journal ArticleDOI
Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
TL;DR: In this article, it was shown that MOSFET degradation is due to interface states generation by electrons having 3.7 eV and higher energies, and this critical energy and the observed time dependence was explained with a physical model involving the breaking of the = Si/sub s/H bonds.