C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
A complete radiation reliability software simulator
TL;DR: In this article, the effects of single event upset (SEU) and total-dose radiation effects on the circuit behavior are modeled using a simulator, which can be used to study the effects on circuit behavior of two radiation phenomena.
Journal ArticleDOI
Air-Spacer MOSFET With Self-Aligned Contact for Future Dense Memories
Jemin Park,Chenming Hu +1 more
TL;DR: In this article, an air-spacer transistor with self-aligned contact (SAC) is proposed, which removes the nitride spacer after the SAC plug has been formed, and a three-dimensional mixed-mode simulation shows that this transistor structure has 35% smaller area, 10% faster speed, and 18% lower switching energy than a non-SAC MOSFET.
Journal ArticleDOI
Observation of anti-Stokes fluorescence in organic dye solutions
Journal ArticleDOI
High field hole velocity and velocity overshoot in silicon inversion layers
TL;DR: In this paper, the saturation velocity of holes at 300 K was found to be strongly dependent on the effective vertical field and no hole velocity overshoot was observed down to 0.16 /spl mu/m channel length at room temperature.
Proceedings ArticleDOI
Molybdenum metal gate MOS technology for post-SiO/sub 2/ gate dielectrics
Qiang Lu,R. Lin,Pushkar Ranade,Yee-Chia Yeo,Xiaofan Meng,Hideki Takeuchi,Tsu-Jae King,Chenming Hu,Hongfa Luan,Songjoo Lee,Weiping Bai,Choong-Ho Lee,Dim-Lee Kwong,Xin Guo,Xiewen Wang,Tso-Ping Ma +15 more
TL;DR: Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated and good device characteristics were obtained in all cases Thermodynamic stability of Mo on Si/sub 3/N/sub 4/, ZrO/sub 2/ and ZrSiO/Sub 4/ was verified by good carrier mobility agreement with the universal mobility model as mentioned in this paper.