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Author

Chenming Hu

Other affiliations: Motorola, National Chiao Tung University, Semtech  ...read more
Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Topics: MOSFET, Gate oxide, CMOS, Gate dielectric, Transistor


Papers
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Proceedings Article
01 Sep 2012
Abstract: A new design for negative capacitance FET (NCFET) is proposed. Simulation using 2-D drift-diffusion and 1-D Landau Model exhibits hysteresis free ID-VG transfer characteristic with low subthreshold swing (28.3mV/decade over six-orders-ofmagnitude current change). Without considering mobility enhancement by strain, non-hysteretic NCFET can achieve ION of 333 μA/μm at 0.3V VDD (IOFF=10pA/μm). Keywordsnegative capacitance; NCFET; ferroelectric; FeFET

18 citations

Journal ArticleDOI
TL;DR: In this paper, the corner spacer design for gate-all-around nanowire FETs is introduced to reduce parasitic capacitance with negligible degradation in ON-current.
Abstract: Parasitic capacitance in nanoscale FETs is becoming a dominant component of the total device capacitance which degrades device and circuit performance. This problem is exacerbated with the introduction of multigate FETs such as FinFET and gate-all-around FETs. In this paper, we introduce the corner spacer design for gate-all-around nanowire FET to significantly decrease parasitic capacitance with negligible degradation in ON-current. We show that the parasitic capacitance of a well-engineered corner spacer in a nanowire FET can be reduced by over 80% compared to the device with full nitride spacers. Ring oscillator stage delay and energy consumption of the corner spacer design are lower than the full spacer by over 50% each. This paper shows the possibility of engineering the spacers as a performance booster to continue scaling.

18 citations

Proceedings ArticleDOI
21 Apr 2008
TL;DR: In this paper, the authors present a methodology to generate performance-aware corner models (PAM), which is improved by emphasizing electrical variation data and reconciling the process and electrical data.
Abstract: We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.

18 citations

Proceedings ArticleDOI
01 Jan 1984
TL;DR: In this paper, a simple mode based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.
Abstract: Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 A have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs including subthreshold swings, channel mobilities and linear transconductances have been examined. A simple mode based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thick ness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

18 citations

Journal ArticleDOI
TL;DR: Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp, and the layers, made amorphous by the implantation, crystallize with the same orientation as the substrate.
Abstract: Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid‐phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe‐lamp‐annealed samples, compared to ∼80% in samples annealed at 900 °C for 30 min.

18 citations


Cited by
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Journal ArticleDOI

[...]

08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

5,711 citations

Book
01 Jan 1999
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

4,826 citations

Journal ArticleDOI
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

3,720 citations