Author
Chenming Hu
Other affiliations: Motorola, National Chiao Tung University, Semtech ...read more
Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Topics: MOSFET, Gate oxide, CMOS, Gate dielectric, Transistor
Papers published on a yearly basis
Papers
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Patent•
TSMC1
TL;DR: In this article, a transistor having, a fin and a gate electrode extending on more than one side of the fin of the transistor, and a dopant in each of a source, drain, and channel region comprising a single dopant type is described.
Abstract: A transistor ( 1 ) having, a fin ( 2 ) and a gate electrode ( 3 ) extending on more than one side of the fin ( 2 ) to comprise more than one gate ( 9 ) of the transistor ( 1 ), and a dopant in each of a source ( 6 ), drain ( 7 ) and a channel region ( 8 ), comprising a single dopant type.
15 citations
01 Dec 1986
TL;DR: Based on the surface potential formulation, a charge-sheet capacitance model for short-channel MOSFET's has been developed and implemented in SPICE as discussed by the authors, where the model equations are charge-based and include the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation and the channel side fringing field capacitances.
Abstract: Based on the surface potential formulation[1], a charge-sheet capacitance model for short-channel MOSFET's has been developed and implemented in SPICE. No iterations are needed to find the surface potential. The model equations are charge-based and includes the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation and the channel side fringing field capacitances. As a byproduct of the development of this capacitance model, an analytic charge-sheet current model has been obtained. The current, charges, their first derivatives(conductance and capacitance) and second derivatives are continuous over all the operating regions. An automatic direct-on-wafer off-chip capacitance measurement system with 14 aF rms resolution has been developed for performing the model parameter extraction.
15 citations
01 May 1998
TL;DR: A statistical performance simulation (SPS) methodology for VLSI circuits is presented and achieves efficiency by analyzing the smaller circuit blocks and generating the performance distribution for the entire circuit.
Abstract: A statistical performance simulation (SPS) methodology for VLSI circuits is presented. Traditional methods of worst-case corner analysis lack accuracy and Monte-Carlo simulations cannot be applied to VLSI circuits because of their complexity. SPS methodology is accurate because no statistical information about the device parameter variation is lost. It achieves efficiency by analyzing the smaller circuit blocks and generating the performance distribution for the entire circuit. Circuit evaluation at any specified performance level is possible.
15 citations
23 Sep 1999
TL;DR: In this paper, the authors investigated the possibility of using DTMOS at Vdd > 0.5V to achieve higher circuit performance and showed that the performance can be improved with high speed and current while delivering a low off state leakage.
Abstract: : A Dynamic Threshold MOS (DTMOS) transistor has the unique ability to operate at 0.5V with high speed and current wile delivering a low off state leakage. This project investigated the possibility of using DTMOS at Vdd > 0.5V to achieve higher circuit performance.
15 citations
01 Dec 2006
TL;DR: An effect of fluorine incorporation into HfSiON on 1/f noise was shown for the first time in this paper, where the interface traps created by Hf close to the conduction band cannot be passivated by fluorine.
Abstract: An effect of fluorine incorporation into HfSiON on 1/f noise is shown for the first time. Fluorine effect on 1/f noise for SiON and HfSiON devices differ in that F does not improve the HfSiON N-FET 1/f noise. Apparently, the interface traps created by Hf close to the conduction band cannot be passivated by fluorine. For future analog/mixed -signal applications, HfSiON P-FET is expected to limit noise performance even though F can improve its noise
15 citations
Cited by
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[...]
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
28 Jul 2005
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...
5,711 citations
Book•
01 Jan 1999
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies.
Table of contents
1 Introduction to Analog Design
2 Basic MOS Device Physics
3 Single-Stage Amplifiers
4 Differential Amplifiers
5 Passive and Active Current Mirrors
6 Frequency Response of Amplifiers
7 Noise
8 Feedback
9 Operational Amplifiers
10 Stability and Frequency Compensation
11 Bandgap References
12 Introduction to Switched-Capacitor Circuits
13 Nonlinearity and Mismatch
14 Oscillators
15 Phase-Locked Loops
16 Short-Channel Effects and Device Models
17 CMOS Processing Technology
18 Layout and Packaging
4,826 citations
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389
3,720 citations