Chenming Hu

TL;DR: In this paper, a unified model of the on-state reliability of a-Si antifuses is presented, which accounts for both thermal activation and electromigration, and it is shown that to ensure a 10-year lifetime, the antifuse should be operated at a current value less than 60% of its programming current value.

TL;DR: In this article, the authors investigated the channel width dependence of the hot-carrier in-duced degradation in pMOSFETs with shallow trench isolation structure and showed that the narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device.

TL;DR: In this paper, the authors used a QM simulator to determine the amount of carrier wavefunction penetration into gate dielectric, which affects the inversion charge density Q/sub inv/inversion charge centroid, and most importantly carrier mobility.

TL;DR: In this paper, the performance of selective CVD tungsten filled vias under DC, pulsed DC, and AC current signals has been studied using Kelvin test structures, and the via electromigration lifetime exhibits a current polarity dependence.