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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Proceedings ArticleDOI
An effective gate resistance model for CMOS RF and noise modeling
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.
Proceedings ArticleDOI
Gate oxide scaling limits and projection
TL;DR: In this article, MOSFET gate oxide scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility degradation, poly-gate depletion, inversion layer thickness, tunneling leakage, charge trapping, and gate delay.
Patent
Semiconductor nano-rod devices
TL;DR: In this paper, a gate dielectric and a gate electrode both wrap around the nano-rod structure to form a transistor device, and the gate is then used as a gate channel.
Journal ArticleDOI
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
TL;DR: The theoretical optimal pocket implant performance is to achieve an L/sub min/ approximately 55/spl sim/60% that of a uniform-channel MOSFET without pocket implant, which is a significant (over one technology generation) improvement.
Journal ArticleDOI
Quantum yield of electron impact ionization in silicon
TL;DR: In this article, the number of generated electronhole pairs as a function of the incident electron energy, up to 5 eV, was found to be in excellent agreement with recent theoretical calculations of quantum yield.