Author
Chenming Hu
Other affiliations: Motorola, National Chiao Tung University, Semtech ...read more
Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Topics: MOSFET, Gate oxide, CMOS, Gate dielectric, Transistor
Papers published on a yearly basis
Papers
More filters
05 May 1997
TL;DR: In this article, the authors examined the recently introduced charge-based capacitance measurement (CBCM) technique through use of a 3D interconnect simulator and found that CBCM has several advantages over extensive computer simulation in determining parasitic interconnect capacitances.
Abstract: This paper examines the recently introduced Charge-Based Capacitance Measurement (CBCM) technique through use of a 3-D interconnect simulator. This method is shown to have several advantages over extensive computer simulation in determining parasitic interconnect capacitances, which are the dominant source of delay in modern circuits. Metal to substrate, interwire, and interlayer capacitances are each discussed and overall close agreement is found between CBCM and 3-D simulation. Full process interconnect characterization is one possible application of this new compact, high-resolution test structure.
14 citations
Patent•
25 Feb 2005
TL;DR: In this article, the authors proposed a tamper-proof content-playback system with the following I/O characteristics: A) at least a portion of its content input(s) is encrypted digital signals, and B) content output (s) are non-digital (eg analog) or nonelectrical (eg image) signals.
Abstract: To protect copyright, the present invention provides a tamper-proof content-playback system Its content-playback unit has the following I/O characteristics: A) at least a portion of its content input(s) is encrypted digital signals; B) at least a portion of its content output(s) is non-digital (eg analog) or non-electrical (eg image) signals Only secure data connections are allowed for decrypted contents inside the content-playback unit Accordingly, its components are preferably integrated into: a single chip, a single package, or a chip/package-on-panel
14 citations
16 Jun 2015
TL;DR: A new production ready compact model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between and is an ideal turn-key solution for simulation and design of future heterogeneous circuits.
Abstract: A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III–V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.
13 citations
01 Dec 1984
TL;DR: In this paper, a high energy (MeV), blanket (mask less), boron implant is used to reduce the substrate resistance by creating a p-buried layer under the CMOS devices.
Abstract: We propose a near method for preventing CMOS latch-up. This method uses a high-energy (MeV), blanket (mask less), boron implant, which reduces the substrate resistance by creating a p-buried layer under the CMOS devices. Since this implant is performed after the n-well drive-in diffusion, the thickness of the lightly doped layer above the implant can be controlled better and scaled more easily. Furthermore, the p to p+ transition region is sharper and, therefore , the suppression of latch-up is more effective than the use of a p-type epilayer on a p+ substrate. Simulations confirm that the increase in holding and critical currents are due to a reduced substrate resistance.
13 citations
23 Jun 1999
TL;DR: In this paper, a novel method of forming 80 nm gate length ultrathin-body SOI MOSFETs has been presented, where lateral solid phase epitaxy of a deposited amorphous Si film was used to provide excellent controllability over 20 nm body thickness.
Abstract: A novel method of forming 80 nm gate length ultrathin-body SOI MOSFETs has been presented. Lateral solid-phase epitaxy of a deposited amorphous Si film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with on-chip bulk devices.
13 citations
Cited by
More filters
[...]
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.
Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …
33,785 citations
28 Jul 2005
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...
5,711 citations
Book•
01 Jan 1999
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies.
Table of contents
1 Introduction to Analog Design
2 Basic MOS Device Physics
3 Single-Stage Amplifiers
4 Differential Amplifiers
5 Passive and Active Current Mirrors
6 Frequency Response of Amplifiers
7 Noise
8 Feedback
9 Operational Amplifiers
10 Stability and Frequency Compensation
11 Bandgap References
12 Introduction to Switched-Capacitor Circuits
13 Nonlinearity and Mismatch
14 Oscillators
15 Phase-Locked Loops
16 Short-Channel Effects and Device Models
17 CMOS Processing Technology
18 Layout and Packaging
4,826 citations
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389
3,720 citations