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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions
TL;DR: In this article, the dependence of metal and polysilicon gate work-functions on the underlying gate dielectric in advanced MOS gate stacks is explored, and the metal work functions on high/spl kappa/ dielectrics differ appreciably from their values on SiO/sub 2/ or in a vacuum.
Patent
Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
Chao-Yuan Su,Pei-Haw Tsao,Hsin-Hui Lee,Chender Huang,Shang Y. Hou,Jeng Shin Pau,Tsai Hao Yi,Chenming Hu +7 more
TL;DR: In this paper, the first and second scribe lines intersect to define one corner point of a die and free area A1 is defined on the first scribe line and is defined by the equation A1=D1×S1.
Journal ArticleDOI
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Yee-Chia Yeo,Qiang Lu,Wen-Chin Lee,Wen-Chin Lee,Tsu-Jae King,Chenming Hu,X.W. Wang,Xin Guo,Xin Guo,Tso-Ping Ma +9 more
TL;DR: In this paper, the authors present a study on the characterization and modeling of direct tunneling gate leakage current in both N and P-type MOSFETs with ultrathin silicon nitride (Si/sub 3/N/sub 4/) gate dielectric formed by the jet-vapor deposition (JVD) technique.
Journal ArticleDOI
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process
N. Lindert,Leland Chang,Yang-Kyu Choi,Erik H. Anderson,Wen-Chin Lee,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +7 more
TL;DR: In this article, double-gate MOSFETs with gate and fin dimensions as small as 30 nm have been fabricated using a new, simplified process, and the electrical gate oxide thickness in these devices is determined from the first FinFET capacitance-versus-voltage characteristics obtained to date.
Journal ArticleDOI
Bistable Resistive Switching in Al2O3 Memory Thin Films
TL;DR: In this article, the resistive switching behavior of radio frequency (RF)-sputtered Al 2 O 3 thin films is investigated, and it is observed that both highconducting state (ON state) and low-conducting (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping.