Chenming Hu

TL;DR: In this article, the Berkeley short-channel IGFET model-common multi-gate model is improved to account for the impact of substrate coupling on the RF parameters, and the model demonstrates excellent agreement with the measured data over a broad range of frequencies.

TL;DR: In this article, the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes was studied. But the authors only considered the high field transport of electron and hole.

TL;DR: In this paper, an accurate in-situ noise and delay measurement technique is developed and a test chip is fabricated to demonstrate its efficacy, which can experimentally characterize the noise peak height and the timing skew due to noise.

TL;DR: In this article, Fowler-Nordheim tunneling current has been investigated using capacitor C-V, I-V and transistor IV measurements, and the interface traps caused degradations in subthreshold current slope and surface mobility.

TL;DR: In this paper, a model of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes is presented, which can well describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 μm regime.