Chenming Hu

TL;DR: In this article, the authors present a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses and demonstrate that there is a definite "size effect" for multiplication regions less than approximately 0.5 /spl mu/m.

TL;DR: In this article, the authors report results from the successful fabrication of metaloxide-semiconductor (MOS) devices with extreme ultraviolet lithography, and describe the alignment strategy, mask layout, mask fabrication, and device characteristics.

TL;DR: In this article, an improved physical equivalent circuit was derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network, which was implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer aided design device simulations and experimental data.

TL;DR: In this paper, the growth of high-quality Ge-rich Ge 1−x Si x (0≤x≤0.14) layers on Ge substrate was demonstrated, and an effective suppression of the phosphorus diffusion and a better thermal stability of the nickel germanide was observed.

TL;DR: In this article, a comparative study of advanced MOSFET structures for around 0.1 /spl mu/m generation in the subjects of short-channel effect, drain saturation current, and relative gate delay is presented.