Chenming Hu

TL;DR: Stress-induced gate leakage current (SILC) was used to evaluate plasma process-induced damage to ultra-thin gate oxide transistors in this paper, and the effect of different gate poly-Si etching processes in a high density TCP (transformer-coupled plasma) system were also evaluated.

TL;DR: An improved model of bulk charge effect for both drain current and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model is presented.

TL;DR: In this paper, an approach to enhance Hf 0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment was presented.

TL;DR: In this article, X-ray microdiffraction was applied to study the thermal and electromigration strains in 10 µm-wide Al conductor lines with 10 mm spatial resolution, and the results showed that SiO2 passivation plays an important role in limiting relaxation of in-plane compressive thermal stresses in the Al lines, but that the passivation is not effective in confining the overall thermal expansion of the Al line along the film normal.

TL;DR: In this paper, the performance and hot-electron reliability of submicron n-channel MOSFET's is investigated. But, the results suggest that the basic physics is rather well-understood and the design criteria developed for micron-size devices can be extended to cover their deep-submicron counterparts.