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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Modeling SiGe FinFETs With Thin Fin and Current-Dependent Source/Drain Resistance
Sourabh Khandelwal,Juan Pablo Duarte,Aditya Sankar Medury,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +5 more
TL;DR: In this article, the authors used BSIM-CMG to model SiGe FinFETs and found that spacer region resistance behaves nonlinearly with drain-current.
Journal ArticleDOI
Line Resistance and Electromigration Variations Induced by Hydrogen-Based Plasma Modifications to the Silicon Carbonitride/Copper Interface
E. Todd Ryan,Jeremy L. Martin,Griselda Bonilla,Ste Ven Molis,Terry A. Spooner,Johnny Widodo,Jae-Hak Kim,Eric G. Liniger,Alfred Grill,Chenming Hu +9 more
TL;DR: In this article, a detailed study of several hydrogen-based plasma cleans prior to plasmaenhanced chemical vapor deposition of silicon carbonitride cap films, and it finds a tradeoff between improved electromigration and increased copper resistivity.
Proceedings ArticleDOI
Next generation CMOS compact models for RF and microwave applications
Ali M. Niknejad,C.H. Doan,Sohrab Emami,Mohan Dunga,Xuemei Xi,Jin He,Robert W. Brodersen,Chenming Hu +7 more
TL;DR: In this article, the design and modeling challenges in moving up to higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz are discussed. And a merger of RF and microwave design perspectives is used to offer insight into the problem.
Proceedings ArticleDOI
Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology
Maria-Anna Chalkiadaki,Anurag Mangla,Christian Enz,Yogesh Singh Chauhan,M. A. Karim,Sriramkumar Venugopalan,Ali M. Niknejad,Chenming Hu +7 more
TL;DR: In this paper, a charge-based compact model BSIM6 has been developed, which is able to handle all the different operating regions of the MOS transistor in the whole geometry range of one technology.