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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Manufacturability Versus Reliability Issues Relevant to Interconnect Metallizations
TL;DR: In this paper, the role of microstructure in multi-level interconnects consisting of (1) AI(Cu) lines (in SiO2) with W and/or AI(cu) studs and (2) an all Cu/polyimide multilevel structure is explored.
Patent
Method of forming a capacitor that includes forming a bottom electrode in a strained silicon layer
Yee-Chia Yeo,Chenming Hu +1 more
TL;DR: In this paper, a decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer, and a substantially flat bottom electrode is formed by a portion of the strained silicon layers and a capacitor dielectric overlying the bottom electrode.
Proceedings ArticleDOI
BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design
TL;DR: The recent and upcoming enhancements of the industry standard BSIM-BULK model are presented and an analytical model for bulk charge effect, in both current and capacitance, is implemented to improve the model accuracy for transconductance and output conductance.
Proceedings ArticleDOI
A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides
TL;DR: In this article, high field endurances of reoxidized-nitrided oxide (RNO) and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide.
Journal ArticleDOI
Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect
Woo-Sung Choi,Fariborz Assaderaghi,Young June Park,Hong-Shick Min,Chenming Hu,Robert W. Dutton +5 more
TL;DR: In this article, a set of numerical simulations were performed on 0.22 /spl mu/m SOI MOSFETs with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model.