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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Proceedings ArticleDOI
High-speed, low-noise resonant-cavity avalanche photodiodes
TL;DR: In this article, a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration has been proposed, which achieved low noise and record bandwidth.
Proceedings ArticleDOI
A two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM
TL;DR: In this article, the first and second metal layers, W studs for contacts and interlevel vias, and Ti/Al(2.5%Cu)/Si metal lines patterned by reactive ion etching were used for planarization of VLSI interconnect structures.
Journal ArticleDOI
Investigation of Mo/Ti/AlN/HfO 2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
Huy Binh Do,Quang Ho Luc,Minh Thien Huu Ha,Sa Hoang Huynh,Tuan Anh Nguyen,Chenming Hu,Yueh Chin Lin,Edward Yi Chang +7 more
TL;DR: In this paper, the use of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO 2 for low power consumption InGaAs-based MOSFET is investigated.
Proceedings Article
An impact ionization model for SOI circuit simulation
TL;DR: In this article, a thermal activation energy model was developed to capture the SO1 device characteristics with both thermally assisted impact ionization and electric field induced impact ionisation accounted for.
Proceedings ArticleDOI
Modeling of threshold voltage for operating point using industry standard BSIM-IMG model
Pragya Kushwaha,Rahul Agarwal,Harshit Agarwal,Yogesh Singh Chauhan,Sourabh Khandelwal,Juan P. Duarte,Yen-Kai Lin,Huan-Lin Chang,Chenming Hu +8 more
TL;DR: In this paper, the authors proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors.