Chenming Hu

Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.

MOSFET Modeling and BSIM3 User's Guide

Abstract: From the Publisher: MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters.. "The book is written for circuit designers, device engineers as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modeling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3.

FinFET-a quasi-planar double-gate MOSFET

Abstract: The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations show FinFET circuit performance exceeds that of advanced single gate MOSFETs.

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Abstract: Negative capacitance (NC) FETs with channel lengths from 30 nm to $50~\mu \text{m}$ , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability

Abstract: The origin of the substrate current of a metal‐oxide‐semiconductor field‐effect transistor when the gate oxide undergoes Fowler–Nordheim stress is investigated. It is also shown that anode hole injection current predicts the breakdown of silicon dioxide between 25 and 130 A and 2.4 and 12 V. While the measured substrate current is entirely due to anode hole injection for oxides thicker than 55 A, tunneling by valence‐band electrons contributes to the substrate current in thinner oxides. Valence‐band electron tunneling current is shown to increase with oxide stressing similar to low‐voltage gate oxide leakage; apparently, both are enhanced by trap‐assisted tunneling. For oxides of thickness between 25 and 130 A, the theory of anode hole injection directly verified for oxides thicker than 55 A is able to model silicon dioxide breakdown accurately.

Lucky-electron model of channel hot electron emission

Abstract: The lucky electron model proposes that an electron is emitted into SiO 2 by first gaining enough energy without suffering an energy stripping collision in the channel and then being redirected toward the Si/SiO 2 interfact. A closed-form expression for the gate current has successfully reproduced the dependence on V g ,V d and L. This model also suggests a straightforward correlation with the substrate current. By measuring the substrate current one may be able to replace or supplement long-term stress test for studying a component of channel hot electron emission that causes instability but does not show up in the gate current. The lucky electron model suggests that the channel hot electron effect would be negligible if V d -V s is less than 2.5 volt no matter how small the channel length or junction depth.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

High-κ gate dielectrics: Current status and materials properties considerations

Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

Design of Analog CMOS Integrated Circuits

Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389