C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
More filters
Proceedings ArticleDOI
CMOS RF modeling for GHz communication IC's
TL;DR: This paper describes a unified device model realized with a lumped resistance network suitable for simulations of both RF and baseband analog circuits and verifies the accuracy of the model to measured data on both device and circuit levels.
Journal ArticleDOI
BSIM6: Analog and RF Compact Model for Bulk MOSFET
Yogesh Singh Chauhan,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,M. A. Karim,Harshit Agarwal,Sourabh Khandelwal,Navid Paydavosi,Juan Pablo Duarte,Christian Enz,Ali M. Niknejad,Chenming Hu +10 more
TL;DR: The BSIM6 model has been extensively validated with industry data from 40-nm technology node and shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations.
Book
FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard
Yogesh Singh Chauhan,Darsen D. Lu,Vanugopalan Sriramkumar,Sourabh Khandelwal,Juan Pablo Duarte,Navid Payvadosi,Ai Niknejad,Chenming Hu +7 more
TL;DR: In this paper, the authors describe the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard, and give a strong foundation on the physics and operation of FinFET.
Proceedings ArticleDOI
Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET
TL;DR: In this paper, the design of DTMOS and its parasitic components are studied by experiments and simulations, and the gate and the body are tied at the side of the device.
Patent
Antifuse structure suitable for VLSI application
TL;DR: In this article, the problem of switch-off in conductor-to-conductor antifuses is solved by reducing the thermal conductivity of the conductive electrodes, which is achieved by using lower thermal conductivities for the electrodes or by using thinner electrodes to increase thermal resistance.