Chenming Hu

Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.

Hot-electron effects in MOSFETs

Abstract: The physics of several hot-electron currents and their impact on IC performance and reliability is reviewed, V_{d} - V_{dsat} is emphasized as the driving force of all hot-electron effects. V_{g}, V_{sub} , and L affect the hot-electron effects only through their influence on V dsat . A simple hot-electron sealing rule is to scale V_{d}, V_{t} , and \sqrt{x_{ox}x_{j}} in proportion to L . Several proposed structural changes should provide considerable relief to the hot-electron problem.

A unified model for hot-electron currents in MOSFET's

Abstract: A simplified and efficient method to account for two-dimensional effects on the electric field in the pinched-off region near to the drain of a MOSFET is shown to provide accurate predictions of the drain, gate and substrate currents, Measurements agree well with theory for a wide range of processing parameters and geometries.

A novel high-speed, 5-volt programming EPROM structure with source-side injection

Abstract: A novel source-side injection EPROM (SIEPROM) structure [1] capable of 5-volt only, high speed programming is described The cell is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control region introduced close to the source Under high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage Furthermore, the gate oxide field in this region is favorable for hot-electron injection into the floating gate As a result, a programming speed of 10 µs at a drain voltage of 5 volts has been demonstrated Also, a soft-write endurance time of 10 years with a read current larger than 100 µA per µm width can be readily achieved

Simulation of MOSFET lifetime under AC hot-electron stress

Abstract: A substrate current model and a quasistatic hot-electron-induced MOSFET degradation model have been implemented using the Substrate Current And Lifetime Evaluator (SCALE) package. It is shown that quasistatic simulation is valid for a class of waveforms that includes those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and postprocessor fashion to form an independent simulator. The preprocessor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The postprocessor then calculates the transient substrate current and makes a lifetime prediction. >

Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation

Abstract: A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. The channel region is delta-doped or counter-doped which permits superior performance for high-end VSLI applications. A selective epitaxy on a counter-doped substrate can be used in a counter-doped device. Doped wells can be used in a bulk silicon substrate in forming the devices. Trenching can be used to isolate devices in the doped wells.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

High-κ gate dielectrics: Current status and materials properties considerations

Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

Design of Analog CMOS Integrated Circuits

Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389