C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
On physical models for gate oxide breakdown
TL;DR: In this article, the effects of thermal annealing on the charge-to-breakdown of SiO 2 films were studied and it was determined that electrical breakdown is not caused by the widely-cited accumulation of trapped electrons.
Journal ArticleDOI
Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs)
TL;DR: In this article, a hybrid mode of device operation, in which both bipolar and MOSFET currents flow simultaneously, has been experimentally investigated using quarter-micrometer-channel-length MOS-FET's which were fabricated on SIMOX silicon-on-insulator substrates.
Journal ArticleDOI
A high-performance lateral bipolar transistor fabricated on SIMOX
TL;DR: In this paper, double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates.
Patent
CMOS SRAM cell configured using multiple-gate transistors
TL;DR: In this paper, a complementary metaloxide-semiconductor static random access memory cell is constructed by a pair of P-channel multiple-gate field effect transistors (P-MGFETs), a pair N-channel MIMO-SEmiconductor field-effect transistors, and a word line connected to the gates of the N-MG FETs.
Proceedings ArticleDOI
Ultra high speed SiGe NPN for advanced BiCMOS technology
Marco Racanelli,Klaus F. Schuegraf,Amol Kalburge,A. Kar-Roy,B. Shen,Chenming Hu,D. Chapek,D. Howard,D. Quon,F. Wang,G. U'ren,L. Lao,H. Tu,J. Zheng,Jinshu Zhang,K. Bell,K. Yin,P. Joshi,S. Akhtar,S. Vo,T. Lee,W. Shi,P. Kempf +22 more
TL;DR: In this paper, a scalable SiGe NPN demonstrating peak Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVCEo of 20 V together with Fmax of 160 GHz is presented at a relatively low current density of 6 mA/spl mu/m/sup 2/