Chenming Hu

TL;DR: In this article, a static memory element includes a first inverter having an input coupled to a left bit node and an output coupled to the right bit node, and a second inverter has an input coupling to the left right bit nodes.

TL;DR: In this article, a method for fabricating a multiple-gate device including the steps of providing a substrate of a semi-conducting layer on an insulator stack, patterning a semiconductor fin, etching the insulator layer at the base of the fin forming an undercut, depositing a gate dielectric layer overlying the fin, and depositing an electrically conductive layer over the gate dieelectric layer, forming a gate straddling across the two sidewall surfaces and the top surface of a fin; and forming a source region and a drain region

TL;DR: A semiconductor device includes an insulator, a semiconductor layer, a first transistor, and a second transistor as mentioned in this paper, which is overlying the insulator layer, and the second transistor is larger than the first thickness.

TL;DR: In this paper, the theoretical correlation between SOI MOSFET's gate current and substrate current was investigated and shown to be a weak function of thin-film SOI thickness.

TL;DR: An analytic charge sheet capacitance model for short-channel MOSFETs is derived and implemented in SPICE based on a surface potential formulation which computes the approximate surface potential without iterations.