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Author

Chenming Hu

Other affiliations: Motorola, National Chiao Tung University, Semtech  ...read more
Bio: Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Topics: MOSFET, Gate oxide, CMOS, Gate dielectric, Transistor


Papers
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Patent
Hung-Wei Chen1, Ping-Kun Wu1, Chao-Hsiung Wang1, Fu-Liang Yang1, Chenming Hu1 
15 Nov 2004
TL;DR: In this article, a method of forming CMOS devices using SOI and hybrid substrate orientations is described, in which a substrate may have multiple crystal orientations, and a logic gate in the substrate may comprise at least one N-FET on one crystal orientation and at least P-FLT on another crystal orientation.
Abstract: In preferred embodiments of the present invention, a method of forming CMOS devices using SOI and hybrid substrate orientations is described. In accordance with a preferred embodiment, a substrate may have multiple crystal orientations. One logic gate in the substrate may comprise at least one N-FET on one crystal orientation and at least one P-FET on another crystal orientation. Another logic gate in the substrate may comprise at least one N-FET and at least one P-FET on the same orientation. Alternative embodiments further include determining the preferred cleavage planes of the substrates and orienting the substrates relative to each other in view of their respective preferred cleavage planes. In a preferred embodiment, the cleavage planes are not parallel.

59 citations

Proceedings ArticleDOI
12 Jun 2007
TL;DR: In this article, a novel surface potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications, where the expressions for terminal currents and charges are co-continuous making the model suitable for mixed signal design.
Abstract: A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are co-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

59 citations

Proceedings ArticleDOI
01 Dec 1998
TL;DR: In this article, the transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial separation by implantation of oxygen (SIMOX) wafers, and the effect of the back gate on the channel, which is unique to SOI, is observed.
Abstract: Separation by plasma implantation of oxygen (SPIMOX) is a low-cost, high-throughput process for fabricating silicon on insulator (SOI) substrates MOSFETs are fabricated on SPIMOX substrates and their characteristics are reported for the first time The transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial separation by implantation of oxygen (SIMOX) wafers The effect of the back gate on the channel, which is unique to SOI, is observed The gate oxides and surface roughness of SPIMOX wafers are also studied

58 citations

Patent
Yeo Yee-Chia1, Fu-Liang Yang1, Chenming Hu1
27 Feb 2003
TL;DR: In this article, a method for forming a contact to a semiconductor fin is proposed, which can be carried out by first providing a SDF that has a top surface, two sidewall surfaces and at least one end surface.
Abstract: A method for forming a contact to a semiconductor fin which can be carried out by first providing a semiconductor fin that has a top surface, two sidewall surfaces and at least one end surface; forming an etch stop layer overlying the fin; forming a passivation layer overlying the etch stop layer; forming a contact hole in the passivation layer exposing the etch stop layer; removing the etch stop layer in the contact hole; and filling the contact hole with an electrically conductive material.

58 citations

Proceedings ArticleDOI
03 Oct 1994
TL;DR: In this article, an evolved technique for characterizing interface state density in fully-depleted SOI MOSFETs is presented, which is based on measuring subthreshold swing of the SOI mOSFets, and the distribution of both front and back-interface state densities in the bandgap can be evaluated by applying a rigorous one-dimensional analytical model for FD-SOI mosFET operating in the weak inversion regime.
Abstract: Interface state densities can dramatically affect the performances of MOSFETs by causing threshold voltage shift and mobility degradation. In SOI structures, due to the complex multi-interface nature and small gate area, the interface state characterization still remains a very challenging problem. Conventional C-V method is not suitable for investigating interfaces in SOI MOS devices, mainly because of the large area needed and the high series resistance in thin-film. Several other measurement techniques based on currents rather than capacitance have been proposed. In this work, an evolved technique for characterizing interface state density in fully-depleted SOI MOSFETs is presented. By measuring subthreshold swing of the SOI MOSFETs, the interface state density can be determined. The distribution of both front- and back-interface state densities in the bandgap can be evaluated by applying a rigorous one-dimensional analytical model for FD-SOI MOSFETs operating in the weak inversion regime. In addition, this technique has been applied successfully to the comparison of interface qualities of various SOI wafers and the study of electrical stress effect. The SOI devices used in this study were n-channel and p-channel MOSFETs fabricated with submicron CMOS technology on both SIMOX and Bonded-and-Etchback SOI (BESOI) wafers.

58 citations


Cited by
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Journal ArticleDOI

[...]

08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

5,711 citations

Book
01 Jan 1999
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

4,826 citations

Journal ArticleDOI
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

3,720 citations